Compositions, optical component, system including an optical component, devices, and other products

ABSTRACT

A composition useful for altering the wavelength of visible or invisible light is disclosed. The composition comprising a solid host material and quantum confined semiconductor nanoparticles, wherein the nanoparticles are included in the composition in amount in the range from about 0.001 to about 15 weight percent based on the weight of the host material. The composition can further include scatterers. An optical component including a waveguide component and quantum confined semiconductor nanoparticles is also disclosed. A device including an optical component is disclosed. A system including an optical component including a waveguide component and quantum confined semiconductor nanoparticles and a light source optically coupled to the waveguide component is also disclosed. A decal, kit, ink composition, and method are also disclosed. A TFEL including quantum confined semiconductor nanoparticles on a surface thereof is also disclosed.

This application is a continuation of U.S. patent application Ser. No.12/283,609 filed 12 Sep. 2008, now U.S. Pat. No. 8,718,437, which is acontinuation-in-part application of commonly owned InternationalApplication No. PCT/US2008/007902, filed 25 Jun. 2008. The PCTApplication claims priority from commonly owned U.S. Patent ApplicationNo. 60/946,090, filed 25 Jun. 2007; U.S. Patent Application No.60/949,306, filed 12 Jul. 2007; U.S. Patent Application No. 60/946,382,filed 26 Jun. 2007; U.S. Patent Application No. 60/971,885, filed 12Sep. 2007; U.S. Patent Application No. 60/973,644, filed 19 Sep. 2007;and U.S. Patent Application No. 61/016,227, filed 21 Dec. 2007. Thedisclosures of each of the foregoing applications are herebyincorporated herein by reference in their entireties. The PCTApplication also claims priority to U.S. Application No. 60/950,598filed 18 Jul. 2007.

U.S. patent application Ser. No. 12/283,609 is also acontinuation-in-part application of commonly owned U.S. patentapplication Ser. No. 12/231,887, filed 5 Sep. 2008, now U.S. Pat. No.8,642,977, issued 4 Feb. 2014, which is a continuation of commonly ownedPCT Application No. PCT/US2007/005589 filed 6 Mar. 2007, which waspublished in the English language as PCT Publication No. WO 2007/103310on 13 Sep. 2007. PCT Application No. PCT/US2007/005589 claims priorityfrom commonly owned U.S. Application No. 60/779,740 filed 7 Mar. 2006.

TECHNICAL FIELD OF THE INVENTION

The present invention relates to the technical fields of opticalcomponents, systems including optical components, devices includingoptical components, and compositions useful in the foregoing.

SUMMARY OF THE INVENTION

In accordance with one aspect of the present invention, there isprovided an optical component including a waveguide component comprisingfrom about 0.001 to about 15 weight percent quantum confinedsemiconductor nanoparticles based on the weight of the waveguidecomponent. In certain embodiments, the waveguide component istransparent to the light coupled to the waveguide component from a lightsource and to light emitted by the nanoparticles. In certainembodiments, the optical component further includes a filter layerdisposed over and/or under the nanoparticles. In certain embodiments,the waveguide component further includes scatterers in an amount in therange from about 0.001 to about 15 weight percent of the weight of thewaveguide component. In certain embodiments, the nanoparticles comprisea core/shell structure. In certain embodiments, the waveguide componentis adapted for having a light source optically coupled thereto. Incertain embodiments, the nanoparticles are included in a layer disposedover a predetermined region of a surface of the waveguide component. Incertain embodiments, the layer comprising nanoparticles has a thicknessfrom about 0.1 to about 200 microns. In certain embodiments, the layercomprising nanoparticles is sufficiently thick so as to absorb lightincident thereon. In certain embodiments, the layer further comprises ahost material in which the quantum confined semiconductor nanoparticlesare distributed. In certain embodiments, the quantum confinedsemiconductor nanoparticles are included in a composition furtherincluding a host material, wherein the composition includes from about0.001 to about 15 weight percent quantum confined semiconductornanoparticles based on the weight of the host material. Preferably thehost material comprises a solid (as opposed to a liquid) material. Incertain embodiments, the nanoparticles are included in a predeterminedarrangement disposed over a predetermined region of a surface of thewaveguide component. In certain embodiments, the composition is includedin a predetermined arrangement disposed over a predetermined region of asurface of the waveguide component. In certain embodiments, thenanoparticles are embedded in a predetermined region of the waveguidecomponent in a predetermined arrangement. In certain embodiments, thepredetermined arrangement has a thickness from about 0.1 to about 200microns.

In accordance with another aspect of the invention, there is provided anoptical component including a waveguide component including acomposition comprising quantum confined semiconductor nanoparticles anda host material, wherein the composition includes from about 0.001 toabout 15 weight percent quantum confined semiconductor nanoparticlesbased on the weight of the host material. In certain embodiments, thecomposition further comprises scatterers. In certain embodiments, thescatterers are included in the composition in an amount in the rangefrom about 0.001 to about 15 weight percent of the weight of the hostmaterial. Preferably the host material comprises a solid (as opposed toa liquid) material. In certain embodiments, the composition is disposedin a predetermined arrangement over a predetermined region of a surfaceof the waveguide component. In certain embodiments, the predeterminedarrangement has a thickness from about 0.1 to about 200 microns. Incertain embodiments, the composition is embedded in a predeterminedregion of the waveguide component in a predetermined arrangement. Incertain embodiments, the optical component further includes means forcoupling light from a light source into the waveguide component.

In accordance with another aspect of the present invention, there isprovided an optical component including a waveguide component includinga layer comprising quantum confined semiconductor nanoparticles and ahost material, wherein the layer includes from about 0.001 to about 15weight percent quantum confined semiconductor nanoparticles based on theweight of the host material. Preferably the host material comprises asolid (as opposed to a liquid) material. In certain embodiments, thelayer further comprises scatterers. In certain embodiments, thescatterers are included in the layer in an amount in the range fromabout 0.001 to about 15 weight percent of the weight of the hostmaterial. In certain embodiments, the optical component further includesmeans for coupling light from a light source into the waveguidecomponent.

In accordance with another aspect of the invention, there is provided anoptical component comprising a film including a carrier substrateincluding quantum confined semiconductor nanoparticles in apredetermined arrangement over a predetermined region of a surfacethereof, wherein the film is attached to a surface of a waveguidecomponent. In certain embodiments, the optical component furtherincludes means for coupling light from a light source into a waveguidecomponent. In certain embodiments, the film includes from about 0.001 toabout 15 weight percent quantum confined semiconductor nanoparticlesbased on the weight of the film. In certain embodiments, the filmcomprises a film taught herein. In certain embodiments, the filmcomprises a decal.

In accordance with another aspect of the present invention, there isprovided an optical component comprising a film including a carriersubstrate including a composition comprising quantum confinedsemiconductor nanoparticles and a host material, wherein the compositionis disposed in a predetermined arrangement over a predetermined regionof a surface thereof and wherein the film is attached to a surface of awaveguide component. In certain embodiments, the composition includesfrom about 0.001 to about 15 weight percent quantum confinedsemiconductor nanoparticles based on the weight of the host material.Preferably the host material comprises a solid (as opposed to a liquid)material. In certain embodiments, the composition further comprisesscatterers. In certain embodiments, scatterers are included in thecomposition in an amount in the range from about 0.001 to about 15weight percent of the weight of the host material. In certainembodiments, the film comprises a decal.

In accordance with another aspect of the present invention, there isprovided a system comprising an optical component including a waveguidecomponent comprising from about 0.001 to about 15 weight percent quantumconfined semiconductor nanoparticles based on the weight of thewaveguide component and a light source optically coupled to thewaveguide component. In certain embodiments, the light source isoptically coupled to an edge of the waveguide component. In certainembodiments, the light source is optically coupled to a surface of thewaveguide component. In certain embodiments, the nanoparticles areincluded in a predetermined arrangement disposed over a surface of thewaveguide component. In certain embodiments, the nanoparticles areincluded in a layer disposed over a surface of the waveguide components.In certain embodiments, the quantum confined semiconductor nanoparticlesincluded in a layer are arranged in one or more predeterminedarrangements. In certain embodiments, the layer further comprises a hostmaterial in which the quantum confined semiconductor nanoparticles aredistributed. In certain embodiments, the layer further comprisesscatterers. In certain embodiments, the nanoparticles are included inthe layer in an amount in the range from about 0.001 to about 15 weightpercent of the weight of the host material. Preferably the host materialcomprises a solid (as opposed to a liquid) material.

In accordance with another aspect of the present invention, there isprovided a system comprising an optical component including a film intaught herein disposed over a waveguide component and a light sourceoptically coupled to the waveguide component. In certain embodiments,the film comprises a decal.

In accordance with another aspect of the present invention, there isprovided a system comprising an optical component including a waveguidecomponent including a composition comprising quantum confinedsemiconductor nanoparticles and a host material, wherein the layerincludes from about 0.001 to about 15 weight percent quantum confinedsemiconductor nanoparticles based on the weight of the host material anda light source optically coupled to the waveguide component. Preferablythe host material comprises a solid (as opposed to a liquid) material.In certain embodiments, the composition further comprises scatterers.

In certain embodiments, a system can include two or more opticalcomponents taught herein and one or more lights sources. In certain ofsuch embodiments, the optical components are preferably arranged suchthat the waveguide component of each is parallel to that of each otheroptical component, and each optical component is coupled to a separatelight source. In certain of such embodiments, the optical components arepreferably optically separated from each such that there is no “opticalcommunication” or ‘cross-talk” between the optical components. Incertain of such embodiments, such separation can be achieved by an airgap due to physical spacing between the components or by a layer of lowindex of refraction material. Other suitable techniques of opticalseparation can also be used. In certain embodiments, each opticalcomponent is coupled to a separate light source.

In accordance with another aspect of the present invention, there isprovided a device including an optical component taught herein.

In accordance with another aspect of the present invention, there isprovided a device including a film taught herein.

In accordance with another aspect of the present invention, there isprovided a device including a system taught herein.

In certain embodiments, a device comprises a display. In certainembodiments, a device comprises a solid state lighting device or otherlighting unit. In certain embodiments, a device comprises a sign. Incertain embodiments, a device comprises a photovoltaic device. Incertain embodiments, a device comprises another electronic oroptoelectronic device.

In accordance with another aspect of the present invention, there isprovided a composition useful for altering the wavelength of visible orinvisible light, the composition comprising a host material and quantumconfined semiconductor nanoparticles, wherein the nanoparticles areincluded in the composition in amount in the range from about 0.001 toabout 15 weight percent based on the weight of the host material.Preferably the host material comprises a solid (as opposed to a liquid)material. In certain embodiments, the composition further includesscatterers in amount in the range from about 0.001 to about 15 weightpercent based on the weight of the host material. In certainembodiments, at least a portion of the nanoparticles include a ligand ona surface thereof wherein the ligand has an affinity for the hostmaterial.

In accordance with another aspect of the present invention, there isprovided a film comprising a carrier substrate including a predeterminedarrangement of quantum confined semiconductor nanoparticles over apredetermined portion of a surface thereof. In certain embodiments, thenanoparticles are included in a layer disposed over a surface of thefilm. In certain embodiments, the quantum confined semiconductornanoparticles included in a layer are arranged in one or morepredetermined arrangements. In certain embodiments, the carriersubstrate comprises a substantially optically transparent material. Incertain embodiments, the film includes from about 0.001 to about 15weight percent quantum confined semiconductor nanoparticles based on theweight of the film. In certain embodiments, the predeterminedarrangement further comprises scatterers. In certain embodiments, thenanoparticles are included in a host material. In certain embodiments,the nanoparticles are included in the composition in amount in the rangefrom about 0.001 to about 15 weight percent based on the weight of thehost material. Preferably the host material comprises a solid (asopposed to a liquid) material. In certain embodiments, the compositionfurther comprises scatterers. In certain embodiments, the film comprisesa decal. In certain embodiments, the film is adapted to be fixedlyattached to a surface. In certain embodiments, the film is adapted to beremovably attached to a surface. In certain embodiments, a film isincluded in an optical component wherein it is attached to a surface ofa waveguide component. In certain embodiments, additional layers and/orfeatures (including, but not limited to, filters, reflective layers,coupling means, etc.) are also included. In certain embodiments, a filmis included in a device.

In accordance with another aspect of the present invention, there isprovided a kit comprising a light source adapted for being opticallycoupled to a waveguide component and one or more films, wherein at leastone film comprises a carrier substrate including quantum confinedsemiconductor nanoparticles disposed over a surface thereof. In certainembodiments, the nanoparticles are disposed in a predeterminedarrangement over a predetermined region of the carrier substrate. Incertain embodiments, the film includes from about 0.001 to about 15weight percent quantum confined semiconductor nanoparticles based on theweight of the film. In certain embodiments, the nanoparticles areincluded in a host material. In certain embodiments, the nanoparticlesare included in the host material in amount in the range from about0.001 to about 15 weight percent based on the weight of the hostmaterial. Preferably the host material comprises a solid (as opposed toa liquid) material. In certain embodiments, the host material furthercomprises scatterers. In certain embodiments, the film comprises adecal. In certain embodiments, the film is adapted to be fixedlyattached to a surface. In certain embodiments, the film is adapted to beremovably attached to a surface. In certain embodiments, a kit includesa light source adapted for being optically coupled to a waveguidecomponent and one or more films, wherein at least one film comprises afilm taught herein including nanoparticles disposed on a surface of thecarrier substrate. In certain embodiments, a kit further includes awaveguide component.

In accordance with another aspect of the present invention, there isprovided a method for making a sign comprising applying a film taughtherein to a surface of a member having light waveguiding capability,coupling light into a surface or edge of the member such that the lightis waveguided within the member to optically excite the quantum confinedsemiconductor nanoparticles included directly or indirectly on thecarrier substrate. In certain embodiments, the member comprises a windowor other structural, decorative, architectural, or other structure orelement fabricated from a material with waveguiding capability. Incertain embodiments, the film comprises a decal. The film may be adheredpermanently to the surface of the member through use of an opticaladhesive, or be repositionable by employing a non-permanent adhesive ora “static cling” film.

In accordance with another aspect of the present invention, there isprovided a thin film electroluminescent lamp comprising quantum confinedsemiconductor nanoparticles disposed over a surface thereof. In certainembodiments, the nanoparticles are disposed in a predeterminedarrangement over a predetermined region of the surface of the lamp. Incertain embodiments, the nanoparticles are included in a host material.In certain embodiments, the host material further includes scatterers.In certain embodiments, the host material includes from about 0.001 toabout 15 weight percent quantum confined semiconductor nanoparticlesbased on the weight of the host material. Preferably the host materialcomprises a solid (as opposed to a liquid) material. In certainembodiments, the nanoparticles are included in a layer disposed over asurface of the lamp. In certain embodiments, the layer further comprisesa host material in which the quantum confined semiconductornanoparticles are distributed. In certain embodiments, the quantumconfined semiconductor nanoparticles included in a layer are arranged inone or more predetermined arrangements. In certain embodiments, thelayer further includes scatterers. In certain embodiments, the layerfurther includes a host material, wherein the layer includes from about0.001 to about 15 weight percent quantum confined semiconductornanoparticles based on the weight of the host material. In certainembodiments, the host material further includes scatterers. In certainembodiments, the scatterers are included in amount in the range fromabout 0.001 to about 15 weight percent based on the weight of the hostmaterial. In certain embodiments, the scatterers are included in amountin the range from about 0.1 to 2 weight percent based on the weight ofthe host material. In certain embodiments, the weight ratio of quantumconfined semiconductor nanoparticles to scatterers is from about 1:100to about 100:1. In certain embodiments, the lamp can further include oneor more filter layers. Such filters can be disposed over and/or underthe nanoparticles. In certain embodiments, the lamp further includes oneor more reflective layers. In certain embodiments, the lamp furtherincludes outcoupling features on a surface of the lamp over which thenanoparticles are disposed. In certain embodiments, the lamp furtherincludes outcoupling features over the nanoparticles. In certainembodiments, additional layers and/or features (including, but notlimited to, filters, reflective layers, coupling means, brightnessenhancing films, etc.) are also included. In certain embodiments, a TFELlamp includes a film taught herein over surface thereof. In certainembodiments, the film comprises a decal.

In accordance with another aspect of the invention, there is provided anink composition comprising quantum confined semiconductor nanoparticlesand a liquid vehicle, wherein the liquid vehicle comprises a compositionincluding one or more functional groups that are capable of beingcross-linked. In certain embodiments, the functional units can becross-linked by UV treatment. In certain embodiments, the functionalunits can be cross-linked by thermal treatment. In certain embodiments,the functional units can be cross-linked by other cross-linkingtechnique readily ascertainable by a person of ordinary skill in arelevant art. In certain embodiments, the composition including one ormore functional groups that are capable of being cross-linked can be theliquid vehicle itself. In certain embodiments, it can be a co-solvent.In certain embodiments, it can be a component of a mixture with theliquid vehicle. In certain embodiments, the ink can further includescatterers.

In certain embodiments, the transition of ink from a liquid to a solidoccurs merely by the evaporation of solvent, and no cross-linkingoccurs.

In accordance with another aspect of the invention, there is provided anink composition comprising quantum confined semiconductor nanoparticles,a liquid vehicle, and scatterers.

In accordance with other aspects of the present invention, there areprovided devices including a composition and/or ink composition taughtherein. In certain embodiments, the ink and/or or composition isincluded in a component of the device. In certain embodiments, the inkand/or composition is included on a surface of a component. In certainembodiments, the ink and/or composition can be included as a layer inthe device. In certain embodiments, the ink and/or composition isincluded on a top and/or bottom surface of the device. The ink and/orcomposition can be included in a predetermined arrangement over apredetermined region of the surface on which it is disposed. Sucharrangement can be patterned or unpatterned, in accordance with theparticular application. In certain embodiments, more than onepredetermined arrangement is included. In certain embodiments, thedevice comprises a display, a solid state lighting device, another lightemitting device, a photovoltaic device, or other electronic oroptoelectronic device.

The foregoing, and other aspects and embodiments described herein andcontemplated by this disclosure all constitute embodiments of thepresent invention.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory onlyand are not restrictive of the invention as claimed. Other embodimentswill be apparent to those skilled in the art from consideration of thespecification and practice of the invention disclosed herein.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings,

FIG. 1 is a schematic drawing depicting an example of an embodiment of asystem including an optical component in accordance with the invention.

FIG. 2 is a schematic drawing depicting an example of an embodiment of asystem including an optical component in accordance with the invention.

FIG. 3 is a schematic drawing depicting an example of an embodiment ofthe present invention.

FIG. 4 depicts spectra to illustrate a method for measuring quantumefficiency.

FIG. 5 is a schematic drawing depicting an example of an embodiment ofthe present invention.

FIG. 6 is a schematic drawing depicting an example of an embodiment of aTFEL lamp in accordance with the invention.

FIG. 7 is a schematic drawing depicting an example of an embodiment of asystem including an optical component in accordance with the invention.

FIG. 8 is a schematic drawing depicting an example of an embodiment ofthe present invention.

FIG. 9 is a schematic drawing depicting an example of an embodiment ofthe present invention.

FIG. 10 is a schematic drawing depicting an example of an embodiment ofthe present invention.

The attached figures are simplified representations presented forpurposes of illustration only; the actual structures may differ innumerous respects, particularly including the relative scale of thearticles depicted and aspects thereof.

For a better understanding to the present invention, together with otheradvantages and capabilities thereof, reference is made to the followingdisclosure and appended claims in connection with the above-describeddrawings.

DETAILED DESCRIPTION OF THE INVENTION

In accordance with one aspect of the invention, there is provided acomposition comprising a host material and quantum confinedsemiconductor nanoparticles, wherein the nanoparticles are included inthe composition in amount in the range from about 0.001 to about 15weight percent based on the weight of the host material.

In certain preferred embodiments, the composition includes from about0.01 to about 10 weight percent quantum confined semiconductornanoparticles based on the weight of the host material. In certain morepreferred embodiments, the composition includes from about 0.01 to about5 weight percent quantum confined semiconductor nanoparticles based onthe weight of the host material. In certain most preferred embodiments,the composition includes from about 0.1 to about 3 weight percentquantum confined semiconductor nanoparticles based on the weight of thehost material. In certain of such most preferred embodiments, thecomposition includes from about 0.1 to about 2 weight percent quantumconfined semiconductor nanoparticles based on the weight of the hostmaterial.

In certain embodiments, the quantum confined semiconductor nanoparticlescomprise semiconductor nanocrystals. In certain embodiments, thesemiconductor nanocrystals comprise a core/shell structure.

In certain embodiments, the composition further includes scatterers. Incertain embodiments, the scatterers are also included in the compositionin amount in the range from about 0.001 to about 15 weight percent basedon the weight of the host material. In certain embodiments, thescatterer concentration is from about 0.1 to 2 weight percent based onthe weight of the host material. In certain embodiments, the weightratio of quantum confined semiconductor nanoparticles to scatterers isfrom about 1:100 to about 100:1.

Examples of scatterers (also referred to herein as light scatteringparticles) that can be used in the embodiments and aspects of theinventions contemplated by this disclosure, include, without limitation,metal or metal oxide particles, air bubbles, and glass and polymericbeads (solid or hollow). Other scatterers can be readily identified bythose of ordinary skill in the art. In certain embodiments, scatterershave a spherical shape. Preferred examples of scattering particlesinclude, but are not limited to, TiO₂, SiO₂, BaTiO₃, BaSO₄, and ZnO.Particles of other materials that are non-reactive with the hostmaterial and that can increase the absorption pathlength of theexcitation light in the host material can be used. Additionally,scatterers that aid in the out-coupling of the down-converted light maybe used. These may or may not be the same scatterers used for increasingthe absorption pathlength. In certain embodiments, the scatterers mayhave a high index of refraction (e.g., TiO₂, BaSO₄, etc) or a low indexof refraction (gas bubbles). Preferably the scatterers are notluminescent.

Selection of the size and size distribution of the scatterers is readilydeterminable by those of ordinary skill in the art. The size and sizedistribution is preferably based upon the refractive index mismatch ofthe scattering particle and the host material in which it the scattereris to be dispersed, and the preselected wavelength(s) to be scatteredaccording to Rayleigh scattering theory. The surface of the scatteringparticle may further be treated to improve dispersability and stabilityin the host material. In one embodiment, the scattering particlecomprises TiO₂ (R902+ from DuPont) of 0.2 μm particle size, in aconcentration in a range from about 0.001 to about 20% by weight. Incertain preferred embodiments, the concentration range of the scatterersis between 0.1% and 10% by weight. In certain more preferredembodiments, a composition includes a scatterer (preferably comprisingTiO₂) at a concentration in a range from about 0.1% to about 5% byweight, and most preferably from about 0.3% to about 3% by weight.

Examples of a host material useful in various embodiments and aspect ofthe inventions described herein include polymers, monomers, resins,binders, glasses, metal oxides, and other nonpolymeric materials. Incertain embodiments, the host material is non-photoconductive. Incertain embodiments, an additive capable of dissipating charge isfurther included in the host material. In certain embodiments, thecharge dissipating additive is included in an amount effective todissipate any trapped charge. In certain embodiments, the host materialis non-photoconductive and further includes an additive capable ofdissipating charge, wherein the additive is included in an amounteffective to dissipate any trapped charge. Preferred host materialsinclude polymeric and non-polymeric materials that are at leastpartially transparent, and preferably fully transparent, to preselectedwavelengths of visible and non-visible light. In certain embodiments,the preselected wavelengths can include wavelengths of light in thevisible (e.g., 400-700 nm), ultraviolet (e.g., 10-400 nm), and/orinfrared (e.g., 700 nm-12 μm) regions of the electromagnetic spectrum.Preferred host materials include cross-linked polymers and solvent-castpolymers. Examples of preferred host materials include, but are notlimited to, glass or a transparent resin. In particular, a resin such asa non-curable resin, heat-curable resin, or photocurable resin issuitably used from the viewpoint of processability. As specific examplesof such a resin, in the form of either an oligomer or a polymer, amelamine resin, a phenol resin, an alkyl resin, an epoxy resin, apolyurethane resin, a maleic resin, a polyamide resin, polymethylmethacrylate, polyacrylate, polycarbonate, polyvinyl alcohol,polyvinylpyrrolidone, hydroxyethylcellulose, carboxymethylcellulose,copolymers containing monomers forming these resins, and the like. Othersuitable host materials can be identified by persons of ordinary skillin the relevant art.

In certain embodiments and aspects of the inventions contemplated bythis disclosure, a host material comprises a photocurable resin. Aphotocurable resin may be a preferred host material in certainembodiments in which the composition is to be patterned. As aphoto-curable resin, a photo-polymerizable resin such as an acrylic acidor methacrylic acid based resin containing a reactive vinyl group, aphoto-crosslinkable resin which generally contains a photo-sensitizer,such as polyvinyl cinnamate, benzophenone, or the like may be used. Aheat-curable resin may be used when the photo-sensitizer is not used.These resins may be used individually or in combination of two or more.

In certain embodiments and aspects of the invention contemplated by thisdisclosure, a host material comprises a solvent-cast resin. A polymersuch as a polyurethane resin, a maleic resin, a polyamide resin,polymethyl methacrylate, polyacrylate, polycarbonate, polyvinyl alcohol,polyvinylpyrrolidone, hydroxyethylcellulose, carboxymethylcellulose,copolymers containing monomers forming these resins, and the like can bedissolved in solvents known to those skilled in the art. Uponevaporation of the solvent, the resin forms a solid host material forthe semiconductor nanoparticles. In certain embodiments, the compositionincluding quantum confined semiconductor nanoparticles and a hostmaterial can be formed from an ink composition comprising quantumconfined semiconductor nanoparticles and a liquid vehicle, wherein theliquid vehicle comprises a composition including one or more functionalgroups that are capable of being cross-linked. The functional units canbe cross-linked, for example, by UV treatment, thermal treatment, oranother cross-linking technique readily ascertainable by a person ofordinary skill in a relevant art. In certain embodiments, thecomposition including one or more functional groups that are capable ofbeing cross-linked can be the liquid vehicle itself. In certainembodiments, it can be a co-solvent. In certain embodiments, it can be acomponent of a mixture with the liquid vehicle. In certain embodiments,the ink can further include scatterers.

In certain embodiments of the inventions contemplated by thisdisclosure, quantum confined semiconductor nanoparticles (e.g.,semiconductor nanocrystals) are distributed within the host material asindividual particles.

In certain embodiments of the inventions contemplated by thisdisclosure, quantum confined semiconductor nanoparticles distributedwithin the host material may include flocculated (or aggregated)particles.

In certain embodiments of the inventions contemplated by thisdisclosure, quantum confined semiconductor nanoparticles may be includedwithin or adsorbed onto host particles. These host particles may bepolymeric or inorganic. These host particles can be dispersed within oron top of the host material.

In accordance with another aspect of the invention, there is provided afilm comprising a carrier substrate including a predeterminedarrangement of quantum confined semiconductor nanoparticles over apredetermined region of a surface thereof. In certain embodiments, thefilm includes from about 0.001 to about 15 weight percent quantumconfined semiconductor nanoparticles based on the weight of the film.

In certain embodiments, the quantum confined semiconductor nanoparticlesare included directly or indirectly on a predetermined region of asurface of the carrier substrate in a predetermined arrangement.

In certain embodiments, the quantum confined semiconductor nanoparticlesare included in the host material in an amount in the range from about0.001 to about 15 weight percent of the weight of the host material.Preferably the host material comprises a solid (as opposed to a liquid)material. In certain embodiments, scatterers are included with thenanoparticles.

In certain embodiments, the quantum confined semiconductor nanoparticlesare included in a layer disposed over a surface of the film. In certainembodiments, the quantum confined semiconductor nanoparticles includedin a layer are arranged in one or more predetermined arrangements. Incertain embodiments, the layer further comprises a host material inwhich the quantum confined semiconductor nanoparticles are distributed.

In certain embodiments, additional layers and/or features (including,but not limited to, filters, reflective layers, coupling means, etc.)are also included. Examples of various additional layers and/or featuresdiscussed herein for inclusion in an optical component or with awaveguide components can also be included in a film. In certainembodiments, the film comprises a decal.

In accordance with another aspect of the invention, there is provided anoptical component comprising a waveguide component and quantum confinedsemiconductor nanoparticles. In certain embodiments, quantum confinedsemiconductor nanoparticles can be included in a host material. Incertain embodiments, the quantum confined semiconductor nanoparticlesare included in a composition in accordance with the present invention.

In certain embodiments, the quantum confined semiconductor nanoparticlesare included directly or indirectly on a predetermined region of asurface of the waveguide component in a predetermined arrangement.

In the various aspects and embodiments of the inventions contemplated bythis disclosure, a predetermined arrangement can be of any configurationor content. For example, the predetermined arrangement can display anytype of image (e.g., logo, design, picture, other graphics, text (e.g.,letters, words, numbers, combinations of letter, words and/or numbers),and/or combinations thereof (e.g., a combination of a logo, design,picture, other graphics, and/or text). Alternatively, the predeterminedarrangement can be a layer that fully or partially covers apredetermined region. In certain embodiments, a second predeterminedarrangement can be further disposed over and/or under a firstpredetermined arrangement. In certain embodiments, the secondpredetermined arrangement comprises quantum confined semiconductornanoparticles. In certain embodiments including more than onepredetermined arrangement, a predetermined arrangement can comprise anopaque or other non-emissive material that can useful, for example, thebrightness of the quantum confined semiconductor nanoparticle backgroundlayer can enhance the details, contrast or other visibility aspects ofone or more of any other predetermined arrangement. The predeterminedarrangement is typically disposed over a surface of a component ordevice that is viewable when the component or device is in use, whetheror not included in or on another device, product, or other article.

In certain embodiments including two or more predetermined arrangements,the arrangements may be positioned to have different orientations. Forexample, one may be positioned for intended viewing in a firstorientation, and another is positioned for intended viewing at a secondorientation, e.g., at a 90 degree rotation from the first.

Quantum confined semiconductor nanoparticles can confine electrons andholes and have a photoluminescent property to absorb light and re-emitdifferent wavelength light. Color characteristics of emitted light fromquantum confined semiconductor nanoparticles depend on the size of thequantum confined semiconductor nanoparticles and the chemicalcomposition of the quantum confined semiconductor nanoparticles.

In certain embodiments, the quantum confined semiconductor nanoparticlesinclude at least one type of quantum confined semiconductor nanoparticlewith respect to chemical composition and size. The type(s) of quantumconfined semiconductor nanoparticles included in one of the aspects orembodiments of the inventions contemplated by this disclosure aredetermined by the wavelength of light to be converted and thewavelengths of the desired light output. As discussed herein, quantumconfined semiconductor nanoparticles may or may not include a shelland/or a ligand on a surface thereof. A shell and/or ligand on quantumconfined semiconductor nanoparticles can serve to passivatenon-radiative defect sites, and to prevent agglomeration or aggregationto overcome the Van der Waals binding force between the nanoparticles.In certain embodiments, the ligand can comprise a material having anaffinity for any host material in which a quantum confined semiconductornanoparticle may be included. As discussed herein, in certainembodiments, a shell comprises an inorganic shell.

The size and composition of the quantum confined semiconductornanoparticles can be selected such that the nanoparticles emit photonsat a predetermined wavelength.

For example, a predetermined arrangement can include quantum confinedsemiconductor nanoparticles that emit light at the same or differentwavelengths.

In a monochromatic embodiment, the quantum confined semiconductornanoparticles are selected to emit at a predetermined wavelength orwavelength band for the desired color upon absorption of excitationlight.

In a multi-color or polychromatic embodiment, for example, the quantumconfined semiconductor nanoparticles are selected to emit two or moredifferent predetermined wavelengths for the desired light output whenexcited by optical energy from one or more light sources. The quantumconfined semiconductor nanoparticles can further be arranged accordingto the wavelength or wavelength band of their emission in accordancewith a predetermined arrangement.

The quantum confined semiconductor nanoparticles included in variousaspects and embodiments of the inventions contemplated by thisdisclosure are preferably members of a population of quantum confinedsemiconductor nanoparticles having a narrow size distribution. Morepreferably, the quantum confined semiconductor nanoparticles comprise amonodisperse or substantially monodisperse population of quantumconfined semiconductor nanoparticles.

The quantum confined semiconductor nanoparticles included in variousaspects and embodiments of the inventions contemplated by thisdisclosure preferably have high emission quantum efficiencies such asgreater than 30%, 40%, 50%, 60%, 70%, 80%, or 90%.

In certain embodiments, an optical component of the invention is useful,when optically coupled to a light source, for displaying one or moreilluminated patterns that correspond to the one or more predeterminedarrangements of quantum confined semiconductor nanoparticles included inthe optical component.

In certain embodiments and aspects of the inventions contemplated bythis disclosure, under ambient light conditions (e.g., when notoptically excited by waveguided light from one or more light sources),the predetermined arrangement is not visibly emissive and issubstantially transparent (<0.1 Abs units across the visible spectrum,or transmission >90% across the visible spectrum).

Quantum confined semiconductor nanoparticles included in certainembodiments of the inventions contemplated by this disclosure areuseful, when optically coupled to a light source, for altering thewavelength of at least a portion of light emitted from the light source.

In these applications, quantum confined semiconductor nanoparticles areselected to have a bandgap smaller than the energy of at least a portionof the original light emitted from the light source. In certainembodiments, more than one light source can be optically coupled to anoptical component.

In certain embodiments, an optical component includes a waveguidecomponent including at least one feature, wherein the feature comprisesa composition comprising a host material for the quantum confinedsemiconductor nanoparticles. Optionally, scatterers and/or otheradditives can also be included in the composition.

In certain embodiments, an optical component includes at least one layerincluding quantum confined semiconductor nanoparticles. In certainembodiments, the quantum confined semiconductor nanoparticles includedin the layer are arranged in one or more predetermined arrangements.Examples of compositions for inclusion in a layer in which the quantumconfined semiconductor nanoparticles may be included are describedherein.

In certain embodiments, an optical component includes at least one suchlayer disposed directly or indirectly on a surface of the waveguidecomponent.

In certain embodiments, an optical component includes at least one suchlayer disposed between the waveguide component and other optional layersthat may be included on the waveguide component.

In certain embodiments, an optical component includes at least one suchlayer disposed between two separate waveguide components. (Otheroptional layers may also be included.)

In certain embodiments of an optical component includes a layercomprising a composition in accordance with the invention. In certainembodiments, at least one feature is disposed on a surface of thewaveguide component.

In certain embodiments, at least one feature is embedded in thewaveguide component.

In certain embodiments, one feature can have dimensions selected suchthat the feature covers all or a predetermined portion of a surface ofthe waveguide component.

In certain embodiments, a plurality of features is disposed on thewaveguide component.

In certain embodiments, a plurality of features is embedded in thewaveguide component.

In certain embodiments, the waveguide component includes one or morerecesses, and at least one feature is included in one of the recesses.

In certain embodiments including a plurality of features, a portion ofthe features can be disposed on a surface of the waveguide component anda portion of the features can be embedded in the waveguide component. Incertain embodiments, the features are arranged in a predeterminedarrangement.

In certain embodiments including a plurality of features, each featurecan comprise the same or different types of quantum confinedsemiconductor nanoparticles.

In certain embodiments including a plurality of features, the pluralityof features can be arranged in a pattern. In certain of suchembodiments, each feature can have a shape that is the same or similarto the shape of the other features. In certain of such embodiments, theshapes of all of the features need not be the same or similar.

In certain embodiments including a plurality of features, each featurecan have size dimensions (e.g., length, width, and thickness) that arethe same or similar to that of the other features. In certainembodiments, the size of all of the features need not be the same orsimilar.

In certain embodiments, a feature can have a thickness from about 0.1 toabout 200 microns.

In certain embodiments, the features can be spatially dithered.

Dithering or spatial dithering is a term used, for example, in digitalimaging to describe the use of small areas of a predetermined palette ofcolors to give the illusion of color depth. For example, white is oftencreated from a mixture of small red, green and blue areas. In certainembodiments, using dithering of compositions including different typesof quantum confined semiconductor nanoparticles (wherein each type iscapable of emitting light of a different color) disposed on and/orembedded in a surface of a waveguide component can create the illusionof a different color. In certain embodiments, a waveguide component thatappears to emit white light can be created from a dithered pattern offeatures including, for example, red, green and blue-emitting quantumconfined semiconductor nanoparticles. Dithered color patterns are wellknown. In certain embodiments, the blue light component of the whitelight can comprise outcoupled unaltered blue excitation light and/orexcitation light that has been down-converted by quantum confinedsemiconductor nanoparticles included in the waveguide component, whereinthe nanoparticles comprise a composition and size preselected todown-convert the excitation light to blue.

In certain embodiments, white light can be obtained by layeringcompositions including different types of quantum confined semiconductornanoparticles (based on composition and size) wherein each type isselected to obtain light having a predetermined color.

In certain embodiments, white light can be obtained by includingdifferent types of quantum confined semiconductor nanoparticles (basedon composition and size) in a host material, wherein each type isselected to obtain light having a predetermined color.

In certain embodiments, a composition comprising a host material andquantum confined semiconductor nanocrystals is preferably hardened afterit is applied to, or embedded in, a surface of a waveguide component.For example, in certain embodiments, the composition may be applied in amolten state which can harden upon cooling; it may be uv-, thermal-,chemically- or otherwise curable and cured after being applied to, orembedded in, a surface of a waveguide component, etc.

In certain embodiments, an optical component comprises a film includinga carrier substrate including quantum confined semiconductornanoparticles disposed over a surface thereof wherein the film isattached to a surface of a waveguide component. In certain embodiments,the film comprises a decal.

The descriptions herein relating to quantum confined semiconductornanoparticles, compositions including quantum confined semiconductornanoparticles, and the application thereof to a waveguide component(e.g., arrangements, thicknesses, multiple-colors, etc.) also apply to acarrier substrate and other aspects and embodiments of the inventionscontemplated by this disclosure.

In certain embodiments, a carrier substrate can further include any oneor more of the additional layers, structures, components, or otherfeatures described herein or otherwise contemplated by this disclosureas a further feature with a waveguide component in the various aspectand embodiments of an optical component in accordance with theinvention.

In certain embodiments, quantum confined semiconductor nanoparticles aredisposed over a predetermined region of a surface of the carriersubstrate in a predetermined arrangement. In certain embodiments, thequantum confined semiconductor nanoparticles are included in a layerdisposed over a predetermined region of a surface of the carriersubstrate. In certain embodiments, the quantum confined semiconductornanoparticles included in a layer are arranged in one or morepredetermined arrangements.

In certain embodiments the carrier substrate can comprise a rigidmaterial, e.g., glass, polycarbonate, acrylic, quartz, sapphire, orother known rigid materials with waveguide component characteristics.

In certain embodiments, the carrier substrate can comprise a flexiblematerial, e.g., a polymeric material such as plastic or silicone (e.g.but not limited to thin acrylic, epoxy, polycarbonate, PEN, PET, PE).

Preferably, at least one, and more preferably two, of the major surfacesof the carrier substrate is smooth.

Preferably the carrier substrate is substantially optically transparent,and more preferably at least 99% optically transparent to the sourcelight, per mm of waveguide pathlength.

In certain embodiments, the geometrical shape and dimensions of acarrier substrate can be selected based on the particular end-useapplication. In certain embodiments, the thickness of the carriersubstrate is substantially uniform. In certain embodiments, thethickness of the carrier substrate is non-uniform (e.g., tapered).

Preferably, the carrier substrate comprises a thin flexible component.In certain embodiments, the thickness of the carrier substrate is lessthan or equal to about 1000 microns. In certain embodiments, thethickness of the carrier substrate is less than or equal to about 500microns. In certain embodiments, the thickness of the carrier substrateis in a range from 10 to about 200 microns.

In certain embodiments, the film comprises a decal. In certainembodiments, a decal is fixedly attachable to a surface. Examples oftechniques for fixedly attaching the decal to a surface include, withoutlimitation, permanent adhesive, lamination, or other fixed attachmenttechniques. In certain embodiments, the decal can be removably attachedto or repositioned on a surface. Examples of techniques for removablyattaching the decal to a surface include use of a low-tack adhesive(e.g., 3M Post-it Note glue, etc.), use of a static cling-type materialas the carrier substrate, or other removable attachment techniques.Preferably the technique or materials used to attach a decal to asurface are optically transparent or substantially opticallytransparent.

In certain embodiments, an underlying filter is disposed between thequantum confined semiconductor nanoparticles (whether or not included ina host material) and the waveguide component. In certain embodiments, anunderlying filter covers all or at least a predetermined region of thewaveguide component beneath one or more features. Preferably theunderlying filter is capable of passing of one or more predeterminedwavelengths of light, and can absorb or optionally reflect otherwavelengths.

In certain embodiments, an overlying filter material is disposed overthe surface of one or more of the features that is opposite thewaveguide component. Preferably the overlying filter is capable passingone or more predetermined wavelengths of light, and can absorb oroptionally reflect other wavelengths.

In certain embodiments, an optical component includes multiple filterlayers on various surfaces of the waveguide component.

In certain embodiments, an optical component can further include one ormore coupling members or structures that permit at least a portion oflight emitted from a light source to be optically coupled from the lightsource into the waveguide component. Such members or structures include,for example, and without limitation, members or structures that areattached to a surface of the waveguide component, protrude from asurface of the waveguide component (e.g., prisms, gratings, etc.), areat least partially embedded in the waveguide component, or arepositioned at least partially within a cavity in the waveguidecomponent.

In certain embodiments, a coupling member or structure can comprisequantum confined semiconductor nanoparticles. In such embodiments,quantum confined semiconductor nanoparticles can enhance coupling oflight to the waveguide component. In these embodiments, coupling oflight to the waveguide component can be especially enhanced when suchnanoparticles are disposed on a surface, preferably a major surface, ofthe waveguide component. An example of such embodiment is schematicallydepicted in FIG. 3. In certain embodiments, such nanoparticles can beincluded in a composition in accordance with embodiments of theinventions described herein.

In certain embodiments of the inventions taught herein, for example,outcoupling members or structures may also be included. In certainembodiments, they can be distributed across a surface of the waveguidecomponent or the top layer of the optical component or film. In certainpreferred embodiments, such distribution is uniform or substantiallyuniform. In certain embodiments, coupling members or structures may varyin shape, size, and/or frequency in order to achieve a more uniformlight distribution. In certain embodiments, coupling members orstructures may be positive, i.e., sitting above the surface of thewaveguide, or negative, i.e., depressed into the surface of thewaveguide, or a combination of both. In certain embodiments, one or morefeatures comprising a composition including a host material and quantumconfined semiconductor nanoparticles can be applied to a surface of apositive coupling member or structure and/or within a negative couplingmember or structure.

In certain embodiments, coupling members or structures can be formed bymolding, embossing, lamination, applying a curable formulation (formed,for example, by techniques including, but not limited to, spraying,lithography, printing (screen, inkjet, flexography, etc), etc.)

In certain embodiments, quantum confined semiconductor nanoparticles areincluded in the waveguide component in an amount in the range from about0.001 to about 15 weight percent based on the weight of the waveguidecomponent. In certain preferred embodiments, the waveguide componentincludes from about 0.01 to about 10 weight percent quantum confinedsemiconductor nanoparticles based on the weight of the waveguidecomponent. In certain more preferred embodiments, the waveguidecomponent includes from about 0.01 to about 5 weight percent quantumconfined semiconductor nanoparticles based on the weight of thewaveguide component. In certain most preferred embodiments, thewaveguide component includes from about 0.1 to about 2 weight percentquantum confined semiconductor nanoparticles based on the weight of thewaveguide component. In certain embodiments, quantum confinedsemiconductor nanoparticles can be distributed within the waveguidecomponent.

In certain embodiments, quantum confined semiconductor nanocrystals canbe distributed in a predetermined region of the waveguide component. Incertain embodiments, the distribution of quantum confined semiconductornanoparticles can be substantially uniform throughout the predeterminedregion of the waveguide component. In certain embodiments, theconcentration of quantum confined semiconductor nanoparticles throughoutthe predetermined region of the waveguide component can be non-uniform(e.g., graded).

In certain embodiments, quantum confined semiconductor nanocrystals canbe distributed throughout the entire waveguide component. In certainembodiments, the distribution of quantum confined semiconductornanoparticles can be substantially uniform throughout the entirewaveguide component. In certain embodiments, the concentration ofquantum confined semiconductor nanoparticles throughout the waveguidecomponent can be non-uniform (e.g., graded).

In certain embodiments, scatterers are also distributed within thewaveguide component. In certain embodiments, scatterers are included inan amount in the range from about 0.001 to about 15 weight percent ofthe weight of the waveguide component. In certain embodiments,additional additives can be included within the waveguide component(e.g., without limitation additional surfactants, defoaming agents).

In certain embodiments, the quantum confined semiconductor nanoparticlesare included in a layer disposed over a surface of the waveguidecomponent.

In certain embodiments, the layer has a thickness from about 0.1 toabout 200 microns.

In certain embodiments, the layer further comprises a host material inwhich the quantum confined semiconductor nanoparticles are distributed.

In certain embodiments, quantum confined semiconductor nanoparticles areincluded in the layer in an amount in the range from about 0.001 toabout 15 weight percent of the weight of the host material. In certainpreferred embodiments, the layer includes from about 0.01 to about 10weight percent quantum confined semiconductor nanoparticles based on theweight of the host material. In certain more preferred embodiments, thelayer includes from about 0.01 to about 5 weight percent quantumconfined semiconductor nanoparticles based on the weight of the hostmaterial. In certain most preferred embodiments, the layer includes fromabout 0.1 to about 2 weight percent quantum confined semiconductornanoparticles based on the weight of the host material.

In certain embodiments, the host material can comprise a polymer,monomer, resin, binder, glass, metal oxide or other nonpolymericmaterial. Other examples of host materials are described herein. Incertain embodiments, the quantum confined semiconductor nanoparticlesare uniformly dispersed in the layer. In certain embodiments, thequantum confined semiconductor nanoparticles are non-uniformly dispersedin the layer.

In certain embodiments, scatterers are also included in the layer. Incertain embodiments, scatterers are included in the layer in an amountin the range from about 0.001 to about 15 weight percent of the weightof the host material.

In certain embodiments, the quantum confined semiconductor nanoparticlesare contained or dispersed within a host material particle, vesicle,microcapsule or the like. Such microcapsules can also be prepared usinga technique such as that described in “Preparation of lipophilicdye-loaded poly(vinyl alcohol) microcapsules and their characteristics,by Budriene et al, 2002. In certain embodiments, the nanoparticles maybe included in particles such as those described in U.S. Application No.61/033,729, filed 4 Mar. 2008, of John R. Linton for “ParticlesIncluding Nanoparticles, Uses Thereof, and Methods”, which is herebyincorporated herein be reference in its entirety. Other techniquesreadily ascertainable by one of ordinary skill in the relevant can beused. An example of a preferred encapsulant system includes PVA and asqualane solvent. Microencapsulation may be a preferred approach todispersing the semiconductor nanoparticles within the host material inorder to improve the packaging (gas permeability properties) or materialproperties (index of refraction, scattering, etc). Microencapsulationmay also be preferred if handling individual nanoparticles is notdesired, for example, during processing. These host material particles,vesicles, microcapsules or the like can have various shapes fromspherical to irregular, and can range in size from 100 nm to 100 μm indiameter. These particles can then be distributed uniformly ornon-uniformly throughout the host material.

Optionally other additives (including, but not limited to, UV absorbers,etc.) can be included in the layer.

In certain embodiments, a plurality of layers comprising quantumconfined semiconductor nanoparticles is disposed over a surface of thewaveguide component. In certain embodiments, additional additives can beincluded within the waveguide component (e.g., without limitationadditional surfactants, defoaming agents, scatterers).

In certain embodiments, the waveguide component includes a layercomprising quantum confined semiconductor nanoparticles disposed as apatterned layer over a predetermined region of a surface of thewaveguide component. In certain preferred embodiments, the layercomprising quantum confined semiconductor nanoparticles are arranged inpredetermined pattern wherein the quantum confined semiconductornanoparticles are selected and tuned to emit photons of one or morepredetermined wavelengths in response to absorption of light.

In certain embodiments, the waveguide component includes a layercomprising quantum confined semiconductor nanoparticles disposed as anunpatterned layer over a predetermined region of a surface of thewaveguide component.

In certain embodiments, a film or layer comprising quantum confinedsemiconductor nanoparticles can be prepared separately from thewaveguide component. It can then be adhered or laminated to the surfaceof the waveguide. The film or layer containing the quantum confinedsemiconductor nanoparticles can then be cut into a predetermined shape.In certain embodiments, the layer shape can be achieved by die-cutting.Such film or layer may further include a filter above and/or below, aspart of the film or layer or as another part of the waveguide or opticalcomponent.

In certain embodiments and aspects of the inventions contemplated bythis disclosure, the quantum confined semiconductor nanoparticles havean average particle size in a range from about 1 to about 100 nanometers(nm). In certain embodiments, the quantum confined nanoparticles have anaverage particle size in a range from about 1 to about 20 nm. In certainembodiments, the quantum confined semiconductor nanoparticles have anaverage particle size in a range from about 2 to about 10 nm.

Preferably, ligands are attached to a surface of at least a portion ofthe quantum confined semiconductor nanoparticles.

In certain embodiments and aspects of the inventions contemplated bythis disclosure including quantum confined semiconductor nanoparticles,at least a portion of the quantum confined semiconductor nanoparticlesare capable of converting the wavelength of at least a portion of lightcoupled into the waveguide component from a light source to one or morepredetermined wavelengths.

In certain embodiments and aspects of the inventions contemplated bythis disclosure including quantum confined semiconductor nanoparticles,the quantum confined semiconductor nanoparticles comprise semiconductornanocrystals. In certain embodiments the quantum confined semiconductornanoparticles comprise semiconductor nanocrystals including a core/shellstructure. In certain preferred embodiments and aspects of theinventions contemplated by this disclosure including a waveguidecomponent, the waveguide component is transparent to light coupled tothe waveguide component from a light source and to light emitted by thequantum confined semiconductor nanoparticles.

In certain embodiments and aspects of the inventions contemplated bythis disclosure including a waveguide component, the waveguide componentcan comprise a rigid material, e.g., glass, polycarbonate, acrylic,quartz, sapphire, or other known rigid materials with waveguidecomponent characteristics.

In certain embodiments and aspects of the inventions contemplated bythis disclosure that include a waveguide component, the waveguidecomponents can alternatively comprise a flexible material, e.g., apolymeric material such as plastic or silicone (e.g. but not limited tothin acrylic, epoxy, polycarbonate, PEN, PET, PE).

In certain embodiments and aspects of the inventions contemplated bythis disclosure that include a waveguide component, the waveguidecomponent is planar.

In certain embodiments and aspects of the inventions contemplated bythis disclosure that include a waveguide components, at least thetexture of the surface of the waveguide component from which light isemitted is selected to enhance or otherwise alter the pattern, angle, orother feature of light transmitted therethrough. For example, in certainembodiments, the surface may be smooth; in certain embodiments, thesurface may be non-smooth (e.g., the surface is roughened or the surfaceincludes one or more raised and/or depressed features); in certainembodiments, the surface may include both smooth and non-smooth regions.

In certain embodiments and aspects of the inventions contemplated bythis disclosure, the geometrical shape and dimensions of a waveguidecomponent and/or an optical component can be selected based on theparticular end-use application. In certain embodiments, the thickness ofthe waveguide component can be substantially uniform. In certainembodiments, the thickness of the waveguide can be non-uniform (e.g.,tapered).

In certain embodiments and aspects of the inventions contemplated bythis disclosure, at least 0.1% of the light coupled from the lightsource to the waveguide component is absorbed and reemitted by thequantum confined semiconductor nanoparticles. In certain embodiments, atleast 10% of the light coupled from the light source to the waveguidecomponent is absorbed and reemitted by the quantum confinedsemiconductor nanoparticles. In certain embodiments, at least 20% of thelight coupled from the light source to the waveguide component isabsorbed and reemitted by the quantum confined semiconductornanoparticles. In certain embodiments, at least 30% of the light coupledfrom the light source to the waveguide component is absorbed andreemitted by the quantum confined semiconductor nanoparticles. Incertain embodiments, at least 40% of the light coupled from the lightsource to the waveguide component is absorbed and reemitted by thequantum confined semiconductor nanoparticles. In certain embodiments, atleast 50% of the light coupled from the light source to the waveguidecomponent is absorbed and reemitted by the quantum confinedsemiconductor nanoparticles. In certain embodiments, at least 60% of thelight coupled from the light source to the waveguide component isabsorbed and reemitted by the quantum confined semiconductornanoparticles. In certain embodiments, at least 70% of the light coupledfrom the light source to the waveguide component is absorbed andreemitted by the quantum confined semiconductor nanoparticles. Incertain embodiments, at least 80% of the light coupled from the lightsource to the waveguide component is absorbed and reemitted by thequantum confined semiconductor nanoparticles. In certain embodiments, atleast 90% of the light coupled from the light source to the waveguidecomponent is absorbed and reemitted by the quantum confinedsemiconductor nanoparticles.

In certain embodiments and aspects of the inventions contemplated bythis disclosure, an optical component comprises a thin flexiblecomponent. In certain embodiments, the thickness of the opticalcomponent is less than or equal to about 1000 microns. In certainembodiments, the thickness of the component is less than or equal toabout 500 microns. In certain embodiments, the thickness of thecomponent is in a range from 10 to about 200 microns.

In certain embodiments, an optical component further includes a couplingmeans for coupling light from a light source through an edge of thewaveguide component. Examples of light sources include, but are notlimited to, those listed below. In certain embodiments, more than onecoupling means can be included for coupling more than one light sourceto the waveguide component.

In accordance with another aspect of the invention, there is provided asystem comprising an optical component in accordance with the inventionand a light source optically coupled to the waveguide component. Incertain embodiments, the waveguide component includes from about 0.001to about 15 weight percent quantum confined semiconductor nanoparticlesbased on the weight of the waveguide component. In certain embodiments,the waveguide component includes from about 0.01 to about 10 weightpercent quantum confined semiconductor nanoparticles based on the weightof the waveguide component. In certain embodiments, the waveguidecomponent includes from about 0.01 to about 5 weight percent quantumconfined semiconductor nanoparticles based on the weight of thewaveguide component. In certain embodiments, the waveguide componentincludes from about 0.1 to about 2 weight percent quantum confinedsemiconductor nanoparticles based on the weight of the waveguidecomponent. In certain embodiments, the quantum confined semiconductornanoparticles are included in a host material. In certain embodiments,the quantum confined semiconductor nanoparticles are included in acomposition in accordance with the invention. In certain embodiments,the quantum confined semiconductor nanoparticles are included in one ormore predetermined arrangements over a predetermined region of a surfaceof the waveguide component that is intended as the viewing surface.

Examples of light sources include, without limitation, solid state lightemitting devices (e.g., an electroluminescent device or a thin filmelectroluminescent device TFEL (which are well know and available fromnumerous sources, including, for example, but not limited to, Durel, andLuminus Films http://www.luminousfilm.com/el_lamp.htm), an LED (e.g., aninorganic LED, such as an inorganic semiconductor LEDs, which are wellknown in the art and are available from numerous sources), a solid statelaser, or other known solid state lighting device), a gas discharge lamp(e.g., a fluorescent lamp CCFL, a sodium vapor lamp, a metal halidelamp, a high pressure mercury lamp, a CRT), other laser devices. Theabove light sources are well know and available from numerous sources. Alight source can emit in a visible or invisible (e.g., infrared,ultraviolet, etc.) region of the electromagnetic spectrum.

In certain embodiments, a system can include a single light source.

In certain embodiments, a system can include a plurality of lightsources.

In certain embodiments including a plurality of light sources, theindividual light sources can be the same or different.

In certain embodiments including a plurality of light sources, eachindividual light sources can emit light having a wavelength that is thesame as or different from that emitted by each of the other lightsources.

In certain embodiments including a plurality of light sources, theindividual light sources can be arranged as an array.

In certain embodiments including a plurality of light sources, theindividual light sources can optically coupled to introduce light intothe same or different areas of the waveguide component.

In certain embodiments, a light source comprises a blue LEDs (e.g.,(In)GaN blue) or a UV LEDs.

In certain embodiments, a light source or light source array isoptically coupled to an edge of the waveguide component.

In one embodiment, a system can include two or more optical componentsof the invention. Such optical components are preferably arranged suchthat the waveguide component (preferably constructed from glass or otheroptically transparent material) of each is parallel to that of eachother optical component, and each optical component is coupled to aseparate light source. The optical components preferably are separatedfrom each such that there is no “optical communication” between theoptical components. Such separation can be achieved by an air gap due tophysical spacing between the components or by a layer of lowerrefractive index. The two or more optical components can be mounted in asingle base or frame or in multiple bases or frames. Each waveguide caninclude one or more predetermined arrangements of quantum confinedsemiconductor nanoparticles having predetermined emissivecharacteristics. The arrangement(s) of quantum confined semiconductornanoparticles included in or on each optical component can be the sameor different from that on another of the optical components. The lightsources can be programmed or otherwise adapted to be lighted at the sametime or on a time sequenced basis. For example, in a signageapplication, each optical component included in the system can have adifferent image (e.g., logo, text, drawing, picture, variouscombinations of the foregoing, or other predetermined arrangement.)Preferably the quantity and thickness of quantum confined semiconductornanoparticles included in the arrangement thereof on one or all of theoptical components are selected such that when the light sourceoptically coupled thereto is not operational, the arrangement issubstantially transparent to the viewer. In certain embodimentsincluding two or more optical components, the optical components may bepositioned to have different orientations. For example, one may bepositioned for intended viewing in a first orientation, and another ispositioned for intended viewing at a second orientation, e.g., at a 90degree rotation from the first.

In certain signage embodiments, the waveguide component can comprise awindow or other structural, decorative, architectural, or otherstructure or element fabricated from a material with waveguidingcapability to which a predetermined arrangement including quantumconfined semiconductor nanoparticles are applied as contemplated by thisdisclosure in accordance with this disclosure and into which light iscoupled from a light source, as also contemplated herein. As isparticularly advantageous for certain applications, when not opticallyexcited by the waveguided light from one or more light sources, thepredetermined arrangement is not visibly emissive and is substantiallytransparent under ambient conditions (<0.1 Abs units).

In accordance with another aspect of the invention, there is provided akit comprising a light source adapted for being optically coupled to awaveguide component and one or more films, wherein at least one filmcomprises a carrier substrate including quantum confined semiconductornanoparticles disposed over a surface thereof. In certain embodiments,the quantum confined semiconductor nanoparticles are disposed in apredetermined arrangement. In certain embodiments, the film includesfrom about 0.001 to about 15 weight percent quantum confinedsemiconductor nanoparticles based on the weight of the film. In certainembodiments, one or more of the films comprises a decal. In certainembodiments, the kit further includes a waveguide component.

In certain embodiments, the geometrical shape and dimensions of acarrier substrate of the decal or other film can be selected based onthe particular end-use application. In certain embodiments, thethickness of the carrier substrate is substantially uniform. In certainembodiments, the thickness of the carrier substrate can be non-uniform(e.g., tapered).

Preferably, the carrier substrate comprises a thin flexible component.In certain embodiments, the thickness of the carrier substrate is lessthan or equal to about 1000 microns. In certain embodiments, thethickness of the carrier substrate is less than or equal to about 500microns. In certain embodiments, the thickness of the carrier substrateis in a range from 10 to about 200 microns.

In certain embodiments, the light source(s) are adapted for couplinglight into a waveguide component. For example, one or more light sources(e.g., one or more lamps, LEDs, or other lighting devices) can byincluded in a structural member which is adapted for fixed or removableattachment to a surface of the waveguide component for coupling lightinto the waveguide component. In certain embodiments, the structuralmember positions the one or more light sources included therein suchthat such that substantially none of the light coupled into thewaveguide component passes directly out of the surface of the waveguidecomponent over which the quantum confined semiconductor nanoparticlesare disposed. In such embodiments, light emitted from the surface isthat absorbed and re-emitted by the nanoparticles. In certainembodiments in which the light is coupled into the surface of thewaveguide component over which the nanoparticles are disposed, the angleat which the light is directed into such surface of the waveguidecomponent is no greater than the critical angle for the member (e.g., 42degrees for glass/air). In certain embodiments, the structural membercomprises a prism with a triangular cross-section, preferably a 30-60-90triangle, which is optically coupled to the waveguide component.

FIG. 5 schematically depicts an example of various embodiments of thepresent invention. A light guide or waveguide (which can be a waveguidecomponent or a member having waveguiding capability) includes quantumconfined semiconductor nanoparticles disposed over a surface thereof. Incertain embodiments, the nanoparticles can be included in a compositiontaught herein. In certain embodiments, the nanoparticles can be includedon a film as taught herein which is attached to the light guide. In theillustrated example, a light source is positioned to couple light intothe surface of the light guide over which the nanoparticles aredisposed. In the depicted example, where access to the edge of the lightguide may not be accessible, in order to avoid light passing directlythrough the light guide, a structural member comprising a prism is usedas a means to position the light source at an angle not exceeding thecritical angle for being coupled into the light guide.

In certain embodiments, the nanoparticles or film can be disposed on thesurface of the light guide. In certain embodiments, other layers orstructures can be position between them.

In certain embodiments, a kit can include other light sources, films,quantum confined semiconductor nanoparticles, waveguide components,compositions, etc. described herein.

In accordance with another aspect of the invention, there is provided amethod for making a sign comprising applying a film in accordance withthe invention to a surface of a member, coupling light into the membersuch that the light optically excites the quantum confined semiconductornanoparticles included directly or indirectly on the carrier substrate.In certain embodiments, a member comprises a window (building, vehicleof any kind) or other structural, decorative, architectural, or otherstructure or element fabricated from a material with waveguidingcapability. In certain embodiments, the film comprises a decal.

In certain embodiments, the method comprises applying a film inaccordance with the invention to a surface of an optically transparentmaterial having light waveguiding capability, coupling light into asurface or edge of the member such that the light is waveguided withinthe member and optically excites the quantum confined semiconductornanoparticles included directly or indirectly on the carrier substrate.In certain embodiments, the member comprises a window (building, vehicleof any kind), or other structural, decorative, architectural, or otherarticle or element fabricated from an optically transparent orsubstantially optically transparent material with waveguidingcapability. The predetermined arrangement on the film can comprise apatterned or unpatterned arrangement. In certain embodiments, the filmcomprises a decal.

In accordance with another aspect of the present invention, there isprovided a TFEL lamp including quantum confined semiconductornanoparticles disposed on a surface of the lamp. In certain embodiments,quantum confined semiconductor nanoparticles are disposed in apredetermined arrangement. In certain embodiments, the quantum confinedsemiconductor nanoparticles are included in a layer disposed over asurface of the lamp. In certain embodiments, the layer covers the entirelight emitting surface of the lamp.

In certain embodiments, the quantum confined semiconductor nanoparticlesincluded in a layer are arranged in one or more predeterminedarrangements. In certain embodiments, the layer further comprises a hostmaterial in which the quantum confined semiconductor nanoparticles aredistributed.

In certain embodiments, the quantum confined semiconductor nanoparticlesare included in the host material in an amount in the range from about0.001 to about 15 weight percent of the weight of the host material.Preferably the host material comprises a solid (as opposed to a liquid)material.

In certain embodiments, scatters are further included in the hostmaterial.

In certain embodiments, a TFEL lamp includes a film in accordance withthe invention. In certain embodiments, the film comprises a decal thatis attached to a surface of the lamp. In certain embodiments, the decalis laminated to the lamp structure. In certain embodiments, the decal isincluded in the lamp structure before the lamp is packaged orencapsulated. In certain embodiments, one or more filter layers areincluded under and/or over the quantum confined semiconductornanoparticles. Other layers and/or features can also be included overthe lamp and/or in the film. In certain embodiments, the film comprisesa decal. In certain embodiments, an underlying filter is disposedbetween the quantum confined semiconductor nanoparticles (whether or notincluded in a host material) and the surface of the TFEL lamp. Incertain embodiments, an underlying filter covers all or at least apredetermined region of the TFEL lamp beneath one or more features.Preferably the underlying filter is capable of passing of one or morepredetermined wavelengths of light, and can absorb or optionally reflectother wavelengths

In certain embodiments, an overlying filter material is disposed overthe surface of one or more of the features that is opposite the TFELlamp. Preferably the overlying filter is capable passing one or morepredetermined wavelengths of light, and can absorb or optionally reflectother wavelengths.

In certain embodiments, multiple filter layers are included.

In certain embodiments, a TFEL lamp can further include one or morecoupling members or structures that permit at least a portion of lightemitted from the lamp to be optically coupled from the lamp into thenanoparticles. Such members or structures include, for example, andwithout limitation, members or structures that are attached to a surfaceof the TFEL lamp, protrude from a surface of the TFEL lamp (e.g.,prisms), are at least partially embedded in the surface of the lamp overwhich the nanoparticles are disposed. In certain embodiments, forexample, coupling members or structures may be distributed across asurface of the lamp. In certain preferred embodiments, such distributionis uniform or substantially uniform. In certain embodiments, couplingmembers or structures may vary in shape, size, and/or frequency in orderto achieve a more uniform light distribution outcoupled from thesurface. In certain embodiments, coupling members or structures may bepositive, i.e., sitting above the surface of the lamp, or negative,i.e., depressed into the surface of the lamp, or a combination of both.In certain embodiments, one or more features comprising a compositionincluding a host material and quantum confined semiconductornanoparticles can be applied to a surface of a positive coupling memberor structure and/or within a negative coupling member or structure.

FIG. 6 schematically depicts an example of various embodiments of a TFELlamp in accordance with the present invention. A TFEL lamp is shownwhich includes quantum confined semiconductor nanoparticles disposedover a surface thereof. In certain embodiments, the nanoparticles can beincluded in a composition taught herein. In certain embodiments, thenanoparticles can be included on a film as taught herein which isattached to a surface of the lamp. In the illustrated example, anoverlying filter is disposed over a portion of the layer ofnanoparticles. In the figure, the uncoated portion of the lamp is shownto generate blue light emission; the lamp light that passes through theportion of the nanoparticle layer that is not covered by the overlyingfilter includes red and blue light emission; and lamp light that passesthrough the portion of the nanoparticle layer that is covered by theoverlying filter includes red light emission. Different color lightoutput can be achieved with different filter selection and nanoparticlesize and composition.

In accordance with still further aspects of the invention, variousapplications and devices that include an optical component and/or systemin accordance with the invention are provided. Examples include, withoutlimitation, user-interface illumination, solid state lighting devices,and displays. A number of examples of user-interface illumination aredescribed in U.S. Pat. No. 6,422,712, the disclosure of which is herebyincorporated herein by reference in its entirety.

Quantum confined semiconductor nanoparticles possess characteristics andproperties that make them particularly well-suited for use in a varietyof devices and end-use applications, including, but not limited to,light emitting devices, solid state lighting, displays, photodetectors,other lighting components, nonvolatile memory devices, solar cells,sensors, photovoltaic devices, etc.

Certain aspects and embodiments of the inventions taught herein may beadvantageous for inclusion in solid state lighting devices, including,but not limited to, those disclosed in U.S. Application Ser. No.60/950,598, filed 18 Jul. 2007, of Peter T. Kazlas for “QuantumDot-Based Light Sheets Useful For Solid State Lighting”, which is herebyincorporated herein by reference in its entirety. Certain aspects andembodiments of the inventions taught herein may be advantageous forinclusion in photovoltaic devices, including, but not limited to, thosedisclosed in U.S. Application Ser. No. 60/946,382, filed 26 Jun. 2007,of Seth Coe-Sullivan et al., for “Solar Cells Including Quantum DotDown-Conversion Materials for Photovoltaics And Materials IncludingQuantum Dots”, which is hereby incorporated herein by reference in itsentirety. Certain aspects and embodiments of the inventions taughtherein may be advantageous for inclusion in other types of electronic oropto-electronic devices.

In certain embodiments, a display includes an optical component inaccordance with the invention and a light source coupled to the opticalcomponent. Examples of a light source include, but are not limited to,an EL lamp, a TFEL lamp, an LED, a fluorescent lamp, a high pressuredischarge lamp, a tungsten halogen lamp, a laser, and arrays of any ofthe foregoing. In certain embodiments, the optical component isback-illuminated (back-lit), front illuminated (front-lit),edge-illuminated (edge-lit), or with other configurations wherein lightfrom a light source is directed through the optical component forcreating display images or indicia.

In certain aspects and embodiments of the inventions contemplated bythis disclosure, quantum confined semiconductor nanoparticles comprisesemiconductor nanocrystals wherein at least a portion of thesemiconductor nanocrystals include one or more ligands attached to asurface thereof.

In certain aspects and embodiments of the inventions contemplated bythis disclosure, a composition in accordance with an embodiment of theinvention can further include a UV absorber, a dispersant, levelingagent, viscosity modifiers, colorants (e.g., dyes), phosphor particles,humectants, fillers, extenders, etc., and mixtures thereof.

In certain aspects and embodiments of the inventions contemplated bythis disclosure, a composition in accordance with an embodiment of theinvention does not include phosphor particles.

In certain preferred embodiments, a composition in accordance with theinvention can be prepared, for example, from an ink comprising quantumconfined semiconductor nanoparticles and a liquid vehicle, wherein theliquid vehicle comprises one or more functional groups that are capableof being polymerized (e.g., cross-linked) to form a host material. Incertain embodiments, the functional units can be cross-linked by UVtreatment. In certain embodiments, the functional units can becross-linked by thermal treatment. In certain embodiments, thefunctional units can be cross-linked by other cross-linking techniquereadily ascertainable by a person of ordinary skill in a relevant art.In certain embodiments, the composition including one or more functionalgroups that are capable of being cross-linked can be the liquid vehicleitself. In certain embodiments the host is solidified from the liquidvehicle by solvent removal from a resin in solution.

See also U.S. Application No. 60/946,090 of Linton, et al., for “MethodsFor Depositing Nanomaterial, Methods For Fabricating A Device, MethodsFor Fabricating An Array Of Devices And Compositions”, filed 25 Jun.2007, and U.S. Application No. 60/949,306 of Linton, et al., for“Compositions, Methods For Depositing Nanomaterial, Methods ForFabricating A Device, And Methods For Fabricating An Array Of Devices”,filed 12 Jul. 2007, the disclosures of each of which are herebyincorporated herein by reference. Optionally, the ink further includesscatterers and/or other additives.

In certain embodiments, an optical component can be a top or bottomsurface, or other component of a light emitting device, a display,another type of lighting device or unit, a waveguide, and the like.

In certain embodiments, a film, waveguide component, or opticalcomponent may optionally include one or more additional layers and/orelements. In one embodiment, for example, an optical component mayfurther include one or more separate layers including scatterers. Alayer including scatterers may be disposed over and/or under any layeror other arrangement of quantum confined semiconductor nanoparticlesincluded directly or indirectly on a film or waveguide component or inan optical component (whether or not the layer or other arrangement ofquantum confined semiconductor nanoparticles further includes scattersand/or other additives or materials). FIG. 8 depicts an example of anembodiment including a layer including quantum confined semiconductornanoparticles 3 on a waveguide 2 with a layer including scatterers 5disposed thereover. FIG. 9 depicts an example of an embodiment includinga layer including quantum confined semiconductor nanoparticles 3disposed indirectly on a waveguide 2 with a layer including scatterers 5disposed under the layer including quantum confined semiconductornanoparticles. FIG. 10 depicts an example of an embodiment including alayer including quantum confined semiconductor nanoparticles 3 disposedindirectly on a waveguide 2 with separate layers including scatterers 5,5′ disposed over and under the layer including quantum confinedsemiconductor nanoparticles. In certain embodiments of a film,waveguide, or optical component including two or more stacked layers orother arrangements including quantum confined semiconductornanoparticles, one or more layers comprising scatterers may be disposedbetween any or all of the layers including nanoparticles. Examples ofscatters are provided elsewhere herein. In certain embodiments, layersincluding scatterers can be patterned or unpatterned. In variousembodiments and aspects of the inventions contemplated by thisdisclosure, quantum confined semiconductor nanoparticles comprisesemiconductor nanocrystals. Semiconductor nanocrystals possesscharacteristics and properties that make them particularly well-suitedfor use in a variety of devices and other end-use applications,including, but not limited to, light emitting devices, displays,photodetectors, nonvolatile memory devices, solar cells, sensors,photovoltaic devices, etc.

In certain aspects and embodiments of the inventions contemplated bythis disclosure, reflective components such as reflective films,aluminized coatings, surface relief features, brightness enhancingfilms, and other components that can re-direct or reflect light can befurther included. A waveguide component or film may also containnon-scattering regions such as substrates.

Examples of optical coupling methods include, but are not limited to,methods of coupling wherein the two regions coupled together havesimilar refractive indices or using an optical adhesive with arefractive index substantially near or in-between the regions or layers.Optical coupling can also be accomplished by an air gap between thelight source and waveguide component. Other non-limiting examples ofoptical coupling include lamination using an index-matched opticaladhesive, coating a region or layer onto another region or layer, or hotlamination using applied pressure to join two or more layers or regionsthat have substantially close refractive indices. Thermal transferringis another method that can be used to optically couple two regions ofmaterial.

FIG. 1 and FIG. 2 provide schematic drawings of examples of certainembodiments of a system including an optical component in accordancewith the present invention and a light source.

In the example shown, the optical component includes a waveguidecomponent 2 and a layer comprising semiconductor nanocrystals 3 disposedon a major surface of the waveguide component. In certain embodiments,the layer comprising quantum confined semiconductor nanoparticles(preferably, semiconductor nanocrystals) can optionally further includea host material in which the quantum confined semiconductornanoparticles are dispersed. Such dispersion can be uniform ornon-uniform. In the depicted example, the light source 1 is opticallycoupled to the waveguide component by being butted against an edge ofthe waveguide component. Other methods of coupling the light source tothe waveguide component include embedding the light source within thewaveguide component, or coupling the light source to the face of thewaveguide through features, gratings, or prisms. As shown in FIG. 7, thelayer comprising semiconductor nanocrystals 3 can further includescatterers 4. As provided above, preferably the scatterers are notluminescent.

Because semiconductor nanocrystals have narrow emission linewidths, arephotoluminescent efficient, and emission wavelength tunable with thesize and/or composition of the nanocrystals, they are preferred for usein the various aspects and embodiments of the inventions contemplated bythis disclosure.

Because the size of the semiconductor nanocrystals preferably rangesfrom 1.2 nm to 15 nm, coatings containing the semiconductor nanocrystalsand not containing scattering particles can be substantiallytransparent. Coatings containing other down-converting particles such asphosphors, which have particle sizes from 1 micron to 50 microns arehazy to opaque (depending on particle concentration).

The size and composition of quantum confined semiconductor nanoparticles(including, e.g., semiconductor nanocrystals) can be selected such thatsemiconductor nanocrystals emit photons at a predetermined wavelength orwavelength band in the far-visible, visible, infra-red or other desiredportion of the spectrum. For example, the wavelength can be between 300and 2,500 nm or greater, such as between 300 and 400 nm, between 400 and700 nm, between 700 and 1100 nm, between 1100 and 2500 nm, or greaterthan 2500 nm.

Quantum confined semiconductor nanoparticles can be dispersed in aliquid medium and are therefore compatible with thin-film depositiontechniques such as spin-casting, drop-casting, phase-separation, and dipcoating. Quantum confined semiconductor nanoparticles can alternativelybe deposited by ink-jet printing, silk-screening, and other liquid filmtechniques available for forming patterns on a surface.

An ink including quantum confined semiconductor nanoparticles dispersedin a liquid medium can also be deposited onto a surface of a waveguideor other substrate or surface by printing, screen-printing,spin-coating, gravure techniques, inkjet printing, roll printing, etc.The ink can be deposited in a predetermined arrangement. For example,the ink can be deposited in a patterned or unpatterned arrangement. Foradditional information that may be useful to deposit an ink onto asubstrate, see for example, International Patent Application No.PCT/US2007/014711, entitled “Methods For Depositing Nanomaterial,Methods For Fabricating A Device, And Methods For Fabricating An ArrayOf Devices”, of Seth A. Coe-Sullivan, filed 25 Jun. 2007, InternationalPatent Application No. PCT/US2007/014705, entitled “Methods ForDepositing Nanomaterial, Methods For Fabricating A Device, Methods ForFabricating An Array Of Devices And Compositions”, of Seth A.Coe-Sullivan, et al., filed 25 Jun. 2007, International PatentApplication No. PCT/US2007/014706, entitled “Methods And ArticlesIncluding Nanomaterial”, of Seth A. Coe-Sullivan, et al., filed 25 Jun.2007, International Patent Application No. PCT/US2007/08873, entitled“Composition Including Material, Methods Of Depositing Material,Articles Including Same And Systems For Depositing Material”, of Seth A.Coe-Sullivan, et al., filed 9 Apr. 2007, International PatentApplication No. PCT/US2007/09255, entitled “Methods Of DepositingMaterial, Methods Of Making A Device, And Systems And Articles For UseIn Depositing Material”, of Maria J, Anc, et al., filed 13 Apr. 2007,International Patent Application No. PCT/US2007/08705, entitled “MethodsAnd Articles Including Nanomaterial”, of Seth Coe-Sullivan, et al, filed9 Apr. 2007, International Patent Application No. PCT/US2007/08721,entitled “Methods Of Depositing Nanomaterial & Methods Of Making ADevice” of Marshall Cox, et al., filed 9 Apr. 2007, U.S. patentapplication Ser. No. 11/253,612, entitled “Method And System ForTransferring A Patterned Material” of Seth Coe-Sullivan, et al., filed20 Oct. 2005, and U.S. patent application Ser. No. 11/253,595, entitled“Light Emitting Device Including Semiconductor Nanocrystals”, of SethCoe-Sullivan, et al., filed 20 Oct. 2005, each of the foregoing patentapplications being hereby incorporated herein by reference.

For additional information relating to contact printing, see, forexample, A. Kumar and G. Whitesides, Applied Physics Letters, 63,2002-2004, (1993); and V. Santhanam and R. P. Andres, Nano Letters, 4,41-44, (2004), each of which is incorporated by reference in itsentirety.

Ink-based deposition techniques can be used for depositing a variousthicknesses of quantum confined semiconductor nanoparticles. In certainembodiments the thickness is selected to achieve the desired %absorption thereby. Examples of desired % absorptions can include,without limitation, from about 0.1% to about 99%, from about 10% toabout 90%, from about 10% to about 50%, from about 50% to about 90%.Preferably, the quantum confined semiconductor nanoparticles absorb atleast a portion of impinging light and reemit at least a portion of theabsorbed light energy as one or more photons of a predeterminedwavelength(s). Most preferably, the quantum confined semiconductornanoparticles do not absorb any, or absorb only negligible amounts of,the re-emitted photons.

In certain embodiments, a composition including quantum confinedsemiconductor nanoparticles is applied a predefined region (alsoreferred to herein as a predetermined region) on a waveguide or othersubstrate. The predefined region is a region on the substrate where thecomposition is selectively applied. The composition and substrate can bechosen such that the material remains substantially entirely within thepredetermined region. By selecting a predefined region that forms apattern, composition can be applied to the substrate such that thematerial forms a pattern. The pattern can be a regular pattern (such asan array, or a series of lines), or an irregular pattern. Once a patternof composition is formed on the substrate, the substrate can have aregion including the material (the predefined region) and a regionsubstantially free of the composition. In some circumstances, thecomposition forms a monolayer thickness of nanoparticles on thesubstrate. The predefined region can be a discontinuous region. In otherwords, when the composition is applied to the predefined region of thesubstrate, locations including the composition can be separated by otherlocations that are substantially free of the composition.

Due to the positioning of the quantum confined semiconductornanoparticles in features or layers resulting from these depositiontechniques, not all of the surfaces of the nanoparticles may beavailable to absorb and emit light.

Alternatively, quantum confined semiconductor nanoparticles can bedispersed in a light-transmissive material (e.g., a polymer, a resin, asilica glass, or a silica gel, etc., which is preferably at leastpartially light-transmissive, and more preferably transparent, to thelight emitted by the quantum confined semiconductor nanoparticles and inwhich quantum confined semiconductor nanoparticles can be dispersed)that is deposited as a full or partial layer or in a patternedarrangement by any of the above-listed or other known techniques.Suitable materials include many inexpensive and commonly availablematerials, such as polystyrene, epoxy, polyimides, and silica glass.

In certain embodiments, such material may contain a dispersion ofquantum confined semiconductor nanoparticles where the nanoparticleshave been size selected so as to produce light of a given color underoptical excitation. Other configurations of quantum confinedsemiconductor nanoparticles disposed in a material, such as, forexample, a two-dimensional layer on a substrate with a polymerovercoating are also contemplated.

In certain embodiments in which quantum confined semiconductornanoparticles are dispersed in a host material and applied as a layer ona surface of the waveguide component, the refractive index of the layerincluding the quantum confined semiconductor nanoparticles can have arefractive index that is greater than or equal to the refractive indexof the waveguide component.

In certain embodiments in which the quantum confined semiconductornanoparticles are dispersed in a host material and applied as a layer ona surface of the waveguide component, the refractive index of the layerincluding the quantum confined semiconductor nanoparticles can have arefractive index that is less than the refractive index of the waveguidecomponent.

In certain embodiments, a reflective material can be applied to theedges of the waveguide component to enhance internal reflections oflight within the waveguide component.

In certain embodiments, a reflective material can be applied to asurface of the waveguide component opposite that on which a layerincluding quantum confined semiconductor nanoparticles is disposed toenhance internal reflections of light within the waveguide component, aswell as to reflect the emission from the semiconductor nanoparticles tothe viewer.

In embodiment of the invention including a layer comprising quantumconfined semiconductor nanoparticles on a surface of the waveguidecomponent, the optical component can optionally further include a cover,coating or layer over at least the portion of the surface upon which thelayer comprising quantum confined semiconductor nanoparticles aredisposed for protection from the environment (e.g., dust, moisture, andthe like) and/or scratching or abrasion.

In certain embodiments, an optical component can further include a lens,prismatic surface, grating, etc. on the surface thereof from which lightis emitted. Anti-reflection, light polarizing, and/or other coatings canalso optionally be included on such surface.

The present invention will be further clarified by the followingexamples, which are intended to be exemplary of the present invention.

Example 1 Preparation of Semiconductor Nanocrystals Capable of EmittingGreen Light

Synthesis of ZnSe Cores:

0.69 mmol diethyl zinc was dissolved in 5 mL of tri-n-octylphosphine andmixed with 1 mL of 1 M TBP—Se. 28.9 mmol of Oleylamine was loaded into a3-neck flask, dried and degassed at 90° C. for one hour. Afterdegassing, the flask was heated to 310° C. under nitrogen. Once thetemperature reached 310° C., the Zn solution was injected and thereaction mixture was heated at 270° C. for 15-30 minutes while aliquotsof the solution were removed periodically in order to monitor the growthof the nanocrystals. Once the first absorption peak of the nanocrystalsreached 350 nm, the reaction was stopped by dropping the flasktemperature to 160° C. and used without further purification forpreparation of CdZnSe cores.

Synthesis of CdZnSe Cores:

1.12 mmol dimethylcadmium was dissolved in 5 mL of tri-n-octylphosphineand mixed with 1 mL of 1 M TBP—Se. In a 4-neck flask, 41.38 mmol oftrioctylphosphine oxide and 4 mmol of hexylphosphonic acid were loaded,dried and degassed at 120° C. for one hour. After degassing, theoxide/acid was heated to 160° C. under nitrogen and 8 ml of the ZnSecore growth solution was transferred at 160° C. into the flask,immediately followed by the addition of Cd/Se solution over the courseof 20 minutes via syringe pump. The reaction mixture was then heated at150° C. for 16-20 hours while aliquots of the solution were removedperiodically in order to monitor the growth of the nanocrystals. Oncethe emission peak of the nanocrystals reached 500 nm, the reaction wasstopped by cooling the mixture to room temperature. The CdZnSe coreswere precipitated out of the growth solution inside a nitrogenatmosphere glove box by adding a 2:1 mixture of methanol and n-butanol.The isolated cores were then dissolved in hexane and used to makecore-shell materials.

Synthesis of CdZnSe/CdZnS Core-Shell Nanocrystals:

25.86 mmol of trioctylphosphine oxide and 2.4 mmol of benzylphosphonicacid were loaded into a four-neck flask. The mixture was then dried anddegassed in the reaction vessel by heating to 120° C. for about an hour.The flask was then cooled to 75° C. and the hexane solution containingisolated CdZnSe cores (0.1 mmol Cd content) was added to the reactionmixture. The hexane was removed under reduced pressure. Dimethylcadmium, diethyl zinc, and hexamethyldisilathiane were used as the Cd,Zn, and S precursors, respectively. The Cd and Zn were mixed inequimolar ratios while the S was in two-fold excess relative to the Cdand Zn. The Cd/Zn and S samples were each dissolved in 4 mL oftrioctylphosphine inside a nitrogen atmosphere glove box. Once theprecursor solutions were prepared, the reaction flask was heated to 150°C. under nitrogen. The precursor solutions were added dropwise over thecourse of 2 hours at 150° C. using a syringe pump. After the shellgrowth, the nanocrystals were transferred to a nitrogen atmosphereglovebox and precipitated out of the growth solution by adding a 3:1mixture of methanol and isopropanol. The isolated core-shellnanocrystals were then dissolved in hexane and used to make compositionsincluding quantum confined semiconductor nanoparticles and a hostmaterial.

Example 2 Preparation of Semiconductor Nanocrystals Capable of EmittingRed Light

Synthesis of CdSe Cores:

1 mmol cadmium acetate was dissolved in 8.96 mmol oftri-n-octylphosphine at 100° C. in a 20 mL vial and then dried anddegassed for one hour. 15.5 mmol of trioctylphosphine oxide and 2 mmolof octadecylphosphonic acid were added to a 3-neck flask and dried anddegassed at 140° C. for one hour. After degassing, the Cd solution wasadded to the oxide/acid flask and the mixture was heated to 270° C.under nitrogen. Once the temperature reached 270° C., 8 mmol oftri-n-butylphosphine was injected into the flask. The temperature wasbrought back to 270° C. where 1.1 mL of 1.5 M TBP—Se was then rapidlyinjected. The reaction mixture was heated at 270° C. for 15-30 minuteswhile aliquots of the solution were removed periodically in order tomonitor the growth of the nanocrystals. Once the first absorption peakof the nanocrystals reached 565-575 nm, the reaction was stopped bycooling the mixture to room temperature. The CdSe cores wereprecipitated out of the growth solution inside a nitrogen atmosphereglovebox by adding a 3:1 mixture of methanol and isopropanol. Theisolated cores were then dissolved in hexane and used to make core-shellmaterials.

Synthesis of CdSe/CdZnS Core-Shell Nanocrystals:

25.86 mmol of trioctylphosphine oxide and 2.4 mmol ofoctadecylphosphonic acid were loaded into a four-neck flask. The mixturewas then dried and degassed in the reaction vessel by heating to 120° C.for about an hour. The flask was then cooled to 75° C. and the hexanesolution containing isolated CdSe cores (0.1 mmol Cd content) was addedto the reaction mixture. The hexane was removed under reduced pressureand then 2.4 mmol of 6-amino-1-hexanol was added to the reactionmixture. Dimethyl cadmium, diethyl zinc, and hexamethyldisilathiane wereused as the Cd, Zn, and S precursors, respectively. The Cd and Zn weremixed in equimolar ratios while the S was in two-fold excess relative tothe Cd and Zn. The Cd/Zn and S samples were each dissolved in 4 mL oftrioctylphosphine inside a nitrogen atmosphere glove box. Once theprecursor solutions were prepared, the reaction flask was heated to 155°C. under nitrogen. The precursor solutions were added dropwise over thecourse of 2 hours at 155° C. using a syringe pump. After the shellgrowth, the nanocrystals were transferred to a nitrogen atmosphereglovebox and precipitated out of the growth solution by adding a 3:1mixture of methanol and isopropanol. The isolated core-shellnanocrystals were then dissolved in hexane and used to make compositionsincluding quantum confined semiconductor nanoparticles and a hostmaterial.

Preparation of Layer Including Semiconductor Nanocrystals

Samples including semiconductor nanocrystals prepared substantially inaccordance with one of the above-described examples are received inhexane. (A sample typically represents approximately 40 mg of soliddispersed in 10-15 ml hexane.) The hexane is removed from the dots undervacuum at room temperature. Care is taken not to overdry or completelyremove all solvent. 0.5 ml of a proprietary, low viscosity reactivediluent RD-12, commercially available from Radcure Corp. 9 Audrey Pt,Fairfield, N.J. 07004-3401, United States, is added to the semiconductornanocrystals while stirring magnetically. After the semiconductornanocrystals are pre-solubilized in the reactive diluent, 2 ml of aproprietary UV-curable acrylic formulation DR-150, also commerciallyavailable from Radcure Corp.) is added dropwise while stirringvigorously. Occasionally, the mixing vial is heated to lower viscosityand aid stirring. After the addition is competed, vacuum is pulled toremove entrained air and residual solvent. The vial is then placed in anultrasonic bath (VWR) from 1 hour to overnight, resulting in a clear,colored solution. Care is taken to avoid temperatures over 40 C whilethe sample is in the ultrasonic bath.

Multiple batches of the semiconductor nanocrystals of the same color inUV curable acrylic are mixed together. For the samples below (Table 2),the three red batches listed in Table 1 were added together; and fourgreen batches listed in Table 1 were added together.

Samples are coated by Mayer rod on precleaned glass slides and cured ina 5000-EC UV Light Curing Flood Lamp from DYMAX Corporation system withan H-bulb (225 mW/cm²) for 10 seconds.

Samples including multiple layers for achieving the desired thicknessare cured between layers. Samples including filters on top of (or below)the layers including host material and quantum confined semiconductornanoparticles have the filters coated by Mayer rod in a separate step.Filters are made by blending UV-curable pigment ink formulations fromCoates/Sun Chemical. (Examples include, but are not limited to, DXT-1935and WIN99.) A filter composition is formulated by adding the weightedabsorbances of the individual colors together to achieve the desiredtransmission characteristics.

TABLE 1 Emis- Solution Li- sion QY Color/Batch # Solvent gand(s) (nm)FWHM (%) Red/Batch #1 Hexane ODPA 617 40 73 (Nanocrystals prepared with6- generally in accordance amino-1- with procedures hexanol described inEXAMPLE 2 above) Red/Batch # 2 Hexane ODPA 622 44 82 (Nanocrystalsprepared with 6- generally in accordance amino-1- with procedureshexanol described in EXAMPLE 2 above) Red/Batch #3 Hexane ODPA 624 44 73(Nanocrystals prepared with 6- generally in accordance amino-1- withprocedures hexanol described in EXAMPLE 2 above) Green/Batch #1 HexaneAromatic 525 34 68 (Nanocrystals prepared generally in accordance withprocedures described in EXAMPLE 1 above) Green/Batch #2 Hexane Aromatic527 34 66 (Nanocrystals prepared generally in accordance with proceduresdescribed in EXAMPLE 1 above) Green/Batch #3 Hexane Aromatic 528 36 64(Nanocrystals prepared generally in accordance with procedures describedin EXAMPLE 1 above) Green/Batch #4 Hexane Aromatic 530 33 60(Nanocrystals prepared generally in accordance with procedures describedin EXAMPLE 1 above) Green/Batch #5 Hexane Aromatic 529 33 68(Nanocrystals prepared generally in accordance with procedures describedin EXAMPLE 1 above)The films were characterized in the following ways:

Thickness: measured by a micrometer.

Emission measurement measured on sample 1 of each type, on Cary Eclipse.

Excitation at 450 nm, 2.5 nm excitation slit, 5 nm emission slit.

Absorption measured at 450 nm on sample 1 of each type, on Cary 5000.Baseline corrected to blank glass slide.

CIE coordinates measured on sample 1 of each type using CS-200 ChromaMeter. Samples were excited with 450 nm LED, and camera collected colordata off axis.

The external photoluminescent (PL) quantum efficiency is measured usingthe method developed by Mello et al., Advanced Materials 9(3):230(1997), which is hereby incorporated by reference. (1). The method usesa collimated 450 nm LED source, an integrating sphere and aspectrometer. Three measurements are taken. First, the LED directlyilluminates the integrating sphere giving a spectrum labeled L1 andshown in FIG. 4 (which graphically represents emission intensity (a.u.)as a function of wavelength (nm)) for purposes of example in describingthis method. Next, the PL sample is placed into the integrating sphereso that only diffuse LED light illuminates the sample giving the (L2+P2)spectrum shown for purposes of example in FIG. 4. Finally, the PL sampleis placed into the integrating sphere so that the LED directlyilluminates the sample (just off normal incidence) giving the (L3+P3)spectrum shown for purposes of example 4. After collecting the data,each spectral contribution (L's and P's) is computed. L1, L2 and L3correspond to the sums of the LED spectra for each measurement and P2and P3 are the sums associated with the PL spectra for 2nd and 3rdmeasurements. The following equation then gives the external PL quantumefficiency:EQE=[(P3·L2)minus(P2·L3)]/(L1·(L2 minus L3))

TABLE 2 Data For Films Prepared As Described Above IncludingSemiconductor Nanocrystals of the Examples Film CIE Absorption SampleNo. of Thickness Emission x (%) @ No. Ligands Filter Layers (mm) (nm)FWHM y 450 nm Film EQE Red ODPA with None 1 #28 rod ~40 625 42 0.5712 4436.57 #A1 6-amino-1- 0.2646 hexanol Red B1 ODPA with None 1 layer (#52rod) ~80 625 42 0.6317 65(Red 39.23 6-amino-1- 0.2965 B1) hexanol (RedB1) Red C1 ODPA with None 2 layers: ~130 625 42 0.6549 84(Red 30.276-amino-1- 1 layer (#52 rod) + 0.3058 C1) hexanol 1 layer (#28 rod) (RedC1) Red ODPA with DXT- 2 layers: ~155 625 42 0.6701 99.6(Red Not CF16-amino-1- 1935: 1 layer (#52 rod) + 0.3110 CF1) applicable hexanolWIN99 1 layer (#28 rod) (Red when filter (5 parts: 1 part), CF1)included 1 layer (23 micron) Green Aromatic None 1 layer (#22 rod) ~40530 31 0.1917 53(Green 32.78 A1 0.6663 A1) (Green A1) Green AromaticNone 1 layer (#52 rod) ~75 530 31 0.2017 77(Green 36.1 B1 0.6882 B1)(Green B1) Green Aromatic None 2 layers: ~120 530 31 0.2137 91(Green25.39 C1 1 layer (#52 rod) + 0.7237 C1) 1 layer (#22 rod) (Green C1)Green Aromatic DXT- 2 layers: ~140 530 31 0.2342 99.5(Green Not CF11935: 1 layer (#52 rod) + 0.7036 CF1) applicable WIN99 1 layer (#22 rod)(Green when filter (5 parts: 1 part), CF1) included 1 layer (23 micron)

Example 3 Preparation of Semiconductor Nanocrystals Capable of EmittingRed Light with 3,5-di-tert-butyl-4-hydroxybenzylphosphonic acid

Synthesis of CdSe Cores:

1 mmol cadmium acetate was dissolved in 8.96 mmol oftri-n-octylphosphine at 100° C. in a 20 mL vial and then dried anddegassed for one hour. 15.5 mmol of trioctylphosphine oxide and 2 mmolof octadecylphosphonic acid were added to a 3-neck flask and dried anddegassed at 140° C. for one hour. After degassing, the Cd solution wasadded to the oxide/acid flask and the mixture was heated to 270° C.under nitrogen. Once the temperature reached 270° C., 8 mmol oftri-n-butylphosphine was injected into the flask. The temperature wasbrought back to 270° C. where 1.1 mL of 1.5 M TBP—Se was then rapidlyinjected. The reaction mixture was heated at 270° C. for 15-30 minuteswhile aliquots of the solution were removed periodically in order tomonitor the growth of the nanocrystals. Once the first absorption peakof the nanocrystals reached 565-575 nm, the reaction was stopped bycooling the mixture to room temperature. The CdSe cores wereprecipitated out of the growth solution inside a nitrogen atmosphereglovebox by adding a 3:1 mixture of methanol and isopropanol. Theisolated cores were then dissolved in hexane and used to make core-shellmaterials.

Preparation of 3,5-Di-tert-butyl-4-hydroxybenzylphosphonic acid

3,5-Di-tert-butyl-4-hydroxybenzylphosphonic acid was obtained from PCISynthesis, 9 Opportunity Way, Newburyport, Mass. 01950.

The preparation of 3,5-Di-tert-butyl-4-hydroxybenzylphosphonic acidutilized the following synthetic approach:

3,5-Di-tert-butyl-4-hydroxybenzylphosphonic acid can be characterized bythe following:

Melting point: 199-200° C. [Lit: 200° C.; Literature ref: J. D. Spivack,FR1555941 (1969)] IR: 3614 cm⁻¹, 3593 cm⁻¹ (weak, O—H stretching).

¹H-NMR (CD₃OD): δ 7.10 (d, aromatic, 2H, J_(P-H)=2.6 Hz), 5.01 (s,exchanged HOD), 2.99 (d, —CH₂, 2H, J_(P-H)=21.2 Hz), 1.41 (s, —CH₃,18H).

¹³C-NMR (CD₃OD): δ 152.9 (aromatic), 137.9 (aromatic), 126.2 (aromatic),123.5 (aromatic), 34.41 (d, —CH₂, 35.75, 33.07, J_(P-C)=537.2 Hz), 34.35(—C(CH₃)₃), 29.7 (—C(CH₃)₃).

³¹P-NMR (CD₃OD): δ 26.8

The above-identified synthetic precursors included in the preparation of3,5-Di-tert-butyl-4-hydroxybenzylphosphonic acid can be characterized bythe following:

Diethyl 3,5-di-tert-butyl-4-hydroxybenzylphosphonate

Melting point: 119-120° C. (Lit: 118-119° C.; Literature ref: R. K.Ismagilov, Zhur. Obshchei Khimii, 1991, 61, 387).

IR: 3451 cm⁻¹ (weak, —OH, stretching), 2953 (weak, —CH₃, C—Hstretching).

¹H-NMR (CDCl₃): δ 7.066 (d, Ar—H, 2H, J_(P-H)=2.8 Hz), 5.145 (s, 1H,—OH), 4.06-3.92 (m, —CH₂CH₃, 4H, H—H and long-range P—H couplings),3.057 (d, Ar—CH ₂, 2H, J_(P-H)=21.0 Hz), 1.412 (s, —C(CH ₃)₃, 18H),1.222 (t, —CH₂CH ₃, 6H).

¹³C-NMR (CDCl₃): δ 153.98 (aromatic), 136.22 (aromatic), 126.61(aromatic), 122.07 (aromatic), 62.14 (—OCH₂CH₃, J_(P-C)=24.4 Hz), 33.63(Ar—CH₂, J_(P-C)=552.4 Hz), 34.53 [—C(CH₃)₃], 30.54 [—C(CH₃)₃], 16.66(—CH₂ CH₃, J_(P-C)=24.4 Hz).

³¹P-NMR (CDCl₃): δ 28.43.

3,5-di-tert-butyl-4-hydroxybenzyl bromide

Melting point: 51-54° C. (Lit: 52-54° C.; Literature ref: J. D. McClure,J. Org. Chem., 1962, 27, 2365)

IR: 3616 cm⁻¹ (medium, O—H stretching), 2954 cm⁻¹ (weak, alkyl C—Hstretching).

¹H-NMR (CDCl₃): δ 7.20 (s, Ar—H, 2H), 5.31 (s, —OH), 4.51 (s, —CH₂, 2H),1.44 {s, [—C(CH ₃)₃], 18H}.

¹³C-NMR (CDCl₃): δ 154.3 (aromatic), 136.5 (aromatic), 128.7 (aromatic),126.3 (aromatic), 35.8 [(—C(CH₃)₃], 34.6 (—CH₂), 30.5 [—C(CH₃)₃].

Other synthetic approaches that are known or readily ascertainable byone of ordinary skill in the relevant art can be used to prepare3,5-Di-tert-butyl-4-hydroxybenzylphosphonic acid.

Synthesis of CdSe/CdZnS Core-Shell Nanocrystals:

25.86 mmol of trioctylphosphine oxide and 2.4 mmol of3,5-di-tert-butyl-4-hydroxybenzylphosphonic acid were loaded into afour-neck flask. The mixture was then dried and degassed in the reactionvessel by heating to 120° C. for about an hour. The flask was thencooled to 75° C. and the hexane solution containing isolated CdSe cores(0.1 mmol Cd content) was added to the reaction mixture. The hexane wasremoved under reduced pressure. Dimethyl cadmium, diethyl zinc, andhexamethyldisilathiane were used as the Cd, Zn, and S precursors,respectively. The Cd and Zn were mixed in equimolar ratios while the Swas in two-fold excess relative to the Cd and Zn. The Cd/Zn and Ssamples were each dissolved in 4 mL of trioctylphosphine inside anitrogen atmosphere glove box. Once the precursor solutions wereprepared, the reaction flask was heated to 155° C. under nitrogen. Theprecursor solutions were added dropwise over the course of 2 hours at155° C. using a syringe pump. After the shell growth, the nanocrystalswere transferred to a nitrogen atmosphere glovebox and precipitated outof the growth solution by adding a 3:1 mixture of methanol andisopropanol. The isolated core-shell nanocrystals were then dissolved inchloroform and used to make semiconductor nanocrystal compositematerials.

In Table 3, the 3,5-di-tert-butyl-4-hydroxybenzylphosphonic acid ligandgroup is referred to as BHT.

Preparation of Layer Including Semiconductor Nanocrystals

Films listed in Table 3 below are prepared using samples includingsemiconductor nanocrystals prepared substantially in accordance with thesynthesis described in Example 3. Bulk chloroform is removed from thenanocrystal samples with nitrogen purging. Residual chloroform isremoved from the semiconductor nanocrystals under vacuum at roomtemperature. Care is taken not to overdry or completely remove allsolvent.

37 ml of RD-12, a low viscosity reactive diluent commercially availablefrom Radcure Corp, 9 Audrey Pl, Fairfield, N.J. 07004-3401, UnitedStates, is added to 4.68 gram of semiconductor nanocrystals undervacuum. The vessel is then backfilled with nitrogen and the mixture ismixed using a vortex mixer. After the semiconductor nanocrystals arepre-solubilized in the reactive diluent, 156 ml of DR-150, an UV-curableacrylic formulation commercially available Radcure, is added slowlyunder vacuum. The vessel is then backfilled with nitrogen and themixture is mixed using a vortex mixer.

2.00 gram TiO2 (if indicated) is next added and the mixture is mixedwith an homogenizer.

12.00 gram curing agent Escacure TPO is added, following which themixture is mixed with an homogenizer. The vessel including the mixtureis then wrappered with black tape to shield the fluid from light.

The vessel in then backfilled with nitrogen and sonified for at leastabout 3 hours. Care is taken to avoid temperatures over 40 C while thesample is in the ultrasonic bath.

Samples are coated by Mayer rod on precleaned glass slides and cured ina 5000-EC UV Light Curing Flood Lamp from DYMAX Corporation system withan H-bulb (225 mW/cm²) for 10 seconds.

A sample is removed for evaluation and coated on a glass slide with a 52rod and cured for 10 sec:

Thickness =   72 μm FWHM = 36 nm Lambda em = 633.1 nm % A_(450 nm) =82.6% % EQE = 50.0%

Occasionally, the mixing vial is heated to lower viscosity and aidstirring. After the addition is competed, vacuum is pulled to removeentrained air. The vial is then placed in an ultrasonic bath (VWR) from1 hour to overnight, resulting in a clear, colored solution. Care istaken to avoid temperatures over 40 C while the sample is in theultrasonic bath.

Multiple batches of the semiconductor nanocrystals of the same color aremixed together. Prior to making the acrylic preparation. Samples arecoated by Mayer rod on precleaned glass slides and cured in a 5000-EC UVLight Curing Flood Lamp from DYMAX Corporation system with an H-bulb(225 mW/cm²) for 10 seconds.

Samples including multiple layers for achieving the desired thicknessare cured between layers. Samples including filters on top of (or below)the layers including host material and quantum confined semiconductornanoparticles have the filters coated by Mayer rod in a separate step.

Filters are made by blending UV-curable pigment ink formulations fromCoates/Sun Chemical. (Examples include, but are not limited to, DXT-1935and WIN99.) A filter composition is formulated by adding the weightedabsorbances of the individual colors together to achieve the desiredtransmission characteristics.

TABLE 3 Film Color/Sample # Emis- Film (Nanocrystal Li- sion EQE Prep.Example #) Solvent gand(s) (nm) FWHM (%) Red/Sample #1 Chloroform BHT631 36 29.0 (without TiO2) (Ex. 3) Red/Sample # 2 Chloroform BHT 633 3650.0 (with TiO2) (Ex. 3)

Quantum confined semiconductor nanoparticles (including, e.g.,semiconductor nanocrystals) are nanometer-scale inorganic semiconductornanoparticles. Semiconductor nanocrystals include, for example,inorganic crystallites between about 1 nm and about 1000 nm in diameter,preferably between about 2 nm and about 50 um, more preferably about 1nm to about 20 nm (such as about 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16,17, 18, 19, or 20 nm).

Semiconductor nanocrystals included in various aspect and embodiments ofthe inventions most preferably have an average nanocrystal diameter lessthan about 150 Angstroms ({acute over (Å)}). In certain embodiments,semiconductor nanocrystals having an average nanocrystal diameter in arange from about 12 to about 150 Angstroms can be particularlydesirable.

However, depending upon the composition and desired emission wavelengthof the semiconductor nanocrystal, the average diameter may be outside ofthese various preferred size ranges.

The semiconductor forming the nanoparticles and nanocrystals cancomprise Group IV elements, Group II-VI compounds, Group II-V compounds,Group III-VI compounds, Group III-V compounds, Group IV-VI compounds,Group I-III-VI compounds, Group II-IV-VI compounds, or Group II-IV-Vcompounds, for example, CdS, CdO, CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe,MgTe, GaAs, GaP, GaSb, GaN, HgS, HgO, HgSe, HgTe, InAs, InP, InSb, InN,AlAs, AlP, AlSb, AlS, PbS, PbO, PbSe, Ge, Si, alloys thereof, and/ormixtures thereof, including ternary and quaternary mixtures and/oralloys.

Examples of the shape of the nanoparticles and nanocrystals includesphere, rod, disk, other shape or mixtures thereof.

In certain preferred aspects and embodiments of the inventions, quantumconfined semiconductor nanoparticles (including, e.g., semiconductornanocrystals) include a “core” of one or more first semiconductormaterials, which may include an overcoating or “shell” of a secondsemiconductor material on at least a portion of a surface of the core.In certain embodiments, the shell surrounds the core. A quantum confinedsemiconductor nanoparticle (including, e.g., semiconductor nanocrystal)core including a shell on at least a portion of a surface of the core isalso referred to as a “core/shell” semiconductor nanocrystal.

For example, a quantum confined semiconductor nanoparticle (including,e.g., semiconductor nanocrystal) can include a core comprising a GroupIV element or a compound represented by the formula MX, where M iscadmium, zinc, magnesium, mercury, aluminum, gallium, indium, thallium,or mixtures thereof, and X is oxygen, sulfur, selenium, tellurium,nitrogen, phosphorus, arsenic, antimony, or mixtures thereof. Examplesof materials suitable for use as a core include, but are not limited to,CdS, CdO, CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe, MgTe, GaAs, GaP, GaSb, GaN,HgS, HgO, HgSe, HgTe, InAs, InP, InSb, InN, AlAs, AlP, AlSb, AlS, PbS,PbO, PbSe, Ge, Si, alloys thereof, and/or mixtures thereof, includingternary and quaternary mixtures and/or alloys. Examples of materialssuitable for use as a shell include, but are not limited to, CdS, CdO,CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe, MgTe, GaAs, GaP, GaSb, GaN, HgS, HgO,HgSe, HgTe, InAs, InP, InSb, InN, AlAs, AlP, AlSb, AlS, PbS, PbO, PbSe,Ge, Si, alloys thereof, and/or mixtures thereof, including ternary andquaternary mixtures and/or alloys.

In certain embodiments, the surrounding “shell” material can have abandgap greater than the bandgap of the core material and can be chosenso as to have an atomic spacing close to that of the “core” substrate.In another embodiment, the surrounding shell material can have a bandgapless than the bandgap of the core material. In a further embodiment, theshell and core materials can have the same crystal structure. Shellmaterials are discussed further below. For further examples ofcore/shell semiconductor structures, see U.S. application Ser. No.10/638,546, entitled “Semiconductor Nanocrystal Heterostructures”, filed12 Aug. 2003, which is hereby incorporated herein by reference in itsentirety.

Quantum confined semiconductor nanoparticles are preferably members of apopulation of semiconductor nanoparticles having a narrow sizedistribution. More preferably, the quantum confined semiconductornanoparticles (including, e.g., semiconductor nanocrystals) comprise amonodisperse or substantially monodisperse population of nanoparticles.

In certain embodiments, the % absorption of quantum confinedsemiconductor nanoparticles included in the various aspects andembodiments of the inventions is, for example, from about 0.1% to about99%; and preferably of at least about 10% to about 99%. In one preferredexample, the % absorption is from about 10% to about 90% absorption. Inanother preferred example, the % absorption is from about 10% to about50%; in another example, the % absorption if from about 50% to about90%.

Quantum confined semiconductor nanoparticles show strong quantumconfinement effects that can be harnessed in designing bottom-upchemical approaches to create optical properties that are tunable withthe size and composition of the nanoparticles.

For example, preparation and manipulation of semiconductor nanocrystalsare described in Murray et al. (J. Am. Chem. Soc., 115:8706 (1993)); inthe thesis of Christopher Murray, “Synthesis and Characterization ofII-VI Quantum Dots and Their Assembly into 3-D Quantum DotSuperlattices”, Massachusetts Institute of Technology, September, 1995;and in U.S. patent application Ser. No. 08/969,302 entitled “HighlyLuminescent Color-selective Materials” which are hereby incorporatedherein by reference in their entireties. Other examples of thepreparation and manipulation of semiconductor nanocrystals are describedin U.S. Pat. Nos. 6,322,901 and 6,576,291, and U.S. Patent ApplicationNo. 60/550,314, each of which is hereby incorporated herein by referencein its entirety.

One example of a method of manufacturing a semiconductor nanocrystal isa colloidal growth process. Colloidal growth occurs by injection an Mdonor and an X donor into a hot coordinating solvent. One example of apreferred method for preparing monodisperse semiconductor nanocrystalscomprises pyrolysis of organometallic reagents, such as dimethylcadmium, injected into a hot, coordinating solvent. This permitsdiscrete nucleation and results in the controlled growth of macroscopicquantities of semiconductor nanocrystals. The injection produces anucleus that can be grown in a controlled manner to form a semiconductornanocrystal. The reaction mixture can be gently heated to grow andanneal the semiconductor nanocrystal. Both the average size and the sizedistribution of the semiconductor nanocrystals in a sample are dependenton the growth temperature. The growth temperature necessary to maintainsteady growth increases with increasing average crystal size. Thesemiconductor nanocrystal is a member of a population of semiconductornanocrystals. As a result of the discrete nucleation and controlledgrowth, the population of semiconductor nanocrystals obtained has anarrow, monodisperse distribution of diameters. The monodispersedistribution of diameters can also be referred to as a size. Preferably,a monodisperse population of particles includes a population ofparticles wherein at least 60% of the particles in the population fallwithin a specified particle size range. A population of monodisperseparticles preferably deviate less than 15% rms (root-mean-square) indiameter and more preferably less than 10% rms and most preferably lessthan 5%.

The narrow size distribution of the semiconductor nanocrystals allowsthe possibility of light emission in narrow spectral widths.Monodisperse semiconductor nanocrystals have been described in detail inMurray et al. (J. Am. Chem. Soc., 115:8706 (1993)); in the thesis ofChristopher Murray, “Synthesis and Characterization of II-VI QuantumDots and Their Assembly into 3-D Quantum Dot Superlattices”,Massachusetts Institute of Technology, September, 1995; and in U.S.patent application Ser. No. 08/969,302 entitled “Highly LuminescentColor-selective Materials” which are hereby incorporated herein byreference in their entireties.

The process of controlled growth and annealing of the semiconductornanocrystals in the coordinating solvent that follows nucleation canalso result in uniform surface derivatization and regular corestructures. As the size distribution sharpens, the temperature can beraised to maintain steady growth. By adding more M donor or X donor, thegrowth period can be shortened. The M donor can be an inorganiccompound, an organometallic compound, or elemental metal, e.g., M can becadmium, zinc, magnesium, mercury, aluminum, gallium, indium orthallium. The X donor is a compound capable of reacting with the M donorto form a material with the general formula MX. Typically, the X donoris a chalcogenide donor or a pnictide donor, such as a phosphinechalcogenide, a bis(silyl) chalcogenide, dioxygen, an ammonium salt, ora tris(silyl) pnictide. Suitable X donors include dioxygen,bis(trimethylsilyl) selenide ((TMS)₂Se), trialkyl phosphine selenidessuch as (tri-noctylphosphine) selenide (TOPSe) or (tri-n-butylphosphine)selenide (TBPSe), trialkyl phosphine tellurides such as(tri-n-octylphosphine) telluride (TOPTe) or hexapropylphosphorustriamidetelluride (HPPTTe), bis(trimethylsilyl)telluride ((TMS)₂Te),bis(trimethylsilyl)sulfide ((TMS)₂S), a trialkyl phosphine sulfide suchas (tri-noctylphosphine) sulfide (TOPS), an ammonium salt such as anammonium halide (e.g., NH₄Cl), tris(trimethylsilyl)phosphide ((TMS)₃P),tris(trimethylsilyl) arsenide ((TMS)₃As), or tris(trimethylsilyl)antimonide ((TMS)₃Sb). In certain embodiments, the M donor and the Xdonor can be moieties within the same molecule.

A coordinating solvent can help control the growth of the semiconductornanocrystal. The coordinating solvent is a compound having a donor lonepair that, for example, has a lone electron pair available to coordinateto a surface of the growing semiconductor nanocrystal. Solventcoordination can stabilize the growing semiconductor nanocrystal.Typical coordinating solvents include alkyl phosphines, alkyl phosphineoxides, alkyl phosphonic acids, or alkyl phosphinic acids, however,other coordinating solvents, such as pyridines, furans, and amines mayalso be suitable for the semiconductor nanocrystal production. Examplesof suitable coordinating solvents include pyridine, tri-n-octylphosphine (TOP), tri-n-octyl phosphine oxide (TOPO) andtrishydroxylpropylphosphine (tHPP). Technical grade TOPO can be used.

Size distribution during the growth stage of the reaction can beestimated by monitoring the absorption or emission line widths of theparticles. Modification of the reaction temperature in response tochanges in the absorption spectrum of the particles allows themaintenance of a sharp particle size distribution during growth.Reactants can be added to the nucleation solution during crystal growthto grow larger crystals. For example, for CdSe and CdTe, by stoppinggrowth at a particular semiconductor nanocrystal average diameter andchoosing the proper composition of the semiconducting material, theemission spectra of the semiconductor nanocrystals can be tunedcontinuously over the wavelength range of 300 nm to 5 microns, or from400 nm to 800 nm.

As discussed above, preferably quantum confined semiconductornanoparticles (including, e.g., semiconductor nanocrystals) have acore/shell structure in which the core includes an overcoating on asurface of the core. The overcoating (also referred to as the shell) canbe a semiconductor material having a composition that is the same as ordifferent from the composition of the core. The overcoat of asemiconductor material on a surface of the core can include a GroupII-VI compounds, Group II-V compounds, Group III-VI compounds, GroupIII-V compounds, Group IV-VI compounds, Group I-III-VI compounds, GroupII-IV-VI compounds, and Group II-IV-V compounds, for example, ZnO, ZnS,ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgS, MgSe, GaAs, GaN, GaP, GaSe, GaSb,HgO, HgS, HgSe, HgTe, InAs, InN, InP, InSb, AlAs, AlN, AlP, AlSb, TlN,TlP, TlAs, TlSb, PbO, PbS, PbSe, PbTe, alloys thereof, and/or mixturesthereof. For example, ZnS, ZnSe or CdS overcoatings can be grown on CdSeor CdTe nanocrystals. An overcoating process is described, for example,in U.S. Pat. No. 6,322,901. By adjusting the temperature of the reactionmixture during overcoating and monitoring the absorption spectrum of thecore, over coated materials having high emission quantum efficienciesand narrow size distributions can be obtained. The overcoating maycomprise one or more layers. The overcoating comprises at least onesemiconductor material which is the same as or different from thecomposition of the core. In certain embodiments, the overcoating has athickness of from about one to about ten monolayers.

The particle size distribution of the semiconductor nanocrystals can befurther refined by size selective precipitation with a poor solvent forthe semiconductor nanocrystals, such as methanol/butanol as described inU.S. Pat. No. 6,322,901. For example, semiconductor nanocrystals can bedispersed in a solution of 10% butanol in hexane. Methanol can be addeddropwise to this stirring solution until opalescence persists.Separation of supernatant and flocculate by centrifugation produces aprecipitate enriched with the largest crystallites in the sample. Thisprocedure can be repeated until no further sharpening of the opticalabsorption spectrum is noted. Size-selective precipitation can becarried out in a variety of solvent/nonsolvent pairs, includingpyridine/hexane and chloroform/methanol. The size-selected semiconductornanocrystal population preferably has no more than a 15% rms deviationfrom mean diameter, more preferably 10% rms deviation or less, and mostpreferably 5% rms deviation or less.

Additional examples of methods of preparing semiconductor nanocrystalsare described in U.S. patent application Ser. No. 11/354,185 of Bawendiet al., entitled “Light Emitting Devices Including SemiconductorNanocrystals”, filed 15 Feb. 2006; U.S. patent application Ser. No.11/253,595 of Coe-Sullivan et al., entitled “Light Emitting DeviceIncluding Semiconductor Nanocrystals”, filed 21 Oct. 2005; U.S. patentapplication Ser. No. 10/638,546 of Kim et al., entitled “SemiconductorNanocrystal Heterostructures”, filed 12 Aug. 2003, referred to above;Murray, et al., J. Am. Chem. Soc., Vol. 115, 8706 (1993); Kortan, etal., J. Am. Chem. Soc., Vol. 112, 1327 (1990); and the Thesis ofChristopher Murray, “Synthesis and Characterization of II-VI QuantumDots and Their Assembly into 3-D Quantum Dot Superlattices”,Massachusetts Institute of Technology, September, 1995, InternationalApplication No. PCT/US2007/13152 of Coe-Sullivan, et al., for“Light-Emitting Devices and Displays With Improved Performance”, filed 4Jun. 2007, U.S. Application No. 60/971,887 of Breen, et al., for“Functionalized Semiconductor Nanocrystals And Method”, filed 12 Sep.2007, U.S. Application No. 60/866,822 of Clough, et al., for“Nanocrystals Including A Group IIIA Element And A Group VA Element,Method, Composition, Device and Other Products”, filed 21 Nov. 2006;U.S. Provisional Patent Application No. 60/866,828 of Craig Breen etal., for “Semiconductor Nanocrystal Materials And Compositions AndDevices Including Same,” filed 21 Nov. 2006; U.S. Provisional PatentApplication No. 60/866,832 of Craig Breen et al. for “SemiconductorNanocrystal Materials And Compositions And Devices Including Same,”filed 21 Nov. 2006; U.S. Provisional Patent Application No. 60/866,833of Dorai Ramprasad for “Semiconductor Nanocrystal And Compositions AndDevices Including Same” filed 21 Nov. 2006; U.S. Provisional PatentApplication No. 60/866,834 of Dorai Ramprasad for “SemiconductorNanocrystal And Compositions And Devices Including Same,” filed 21 Nov.2006; U.S. Provisional Patent Application No. 60/866,839 of DoraiRamprasad for “Semiconductor Nanocrystal And Compositions And DevicesIncluding Same” filed 21 Nov. 2006; and U.S. Provisional PatentApplication No. 60/866,843 of Dorai Ramprasad for “SemiconductorNanocrystal And Compositions And Devices Including Same,” filed 21 Nov.2006. Each of the foregoing is hereby incorporated by reference hereinin its entirety.

In various aspects and embodiments of the inventions contemplated bythis disclosure, quantum confined semiconductor nanoparticles(including, but not limited to, semiconductor nanocrystals) optionallyhave ligands attached thereto.

In one embodiment, the ligands are derived from the coordinating solventused during the growth process. The surface can be modified by repeatedexposure to an excess of a competing coordinating group to form anoverlayer. For example, a dispersion of the capped semiconductornanocrystal can be treated with a coordinating organic compound, such aspyridine, to produce crystallites which disperse readily in pyridine,methanol, and aromatics but no longer disperse in aliphatic solvents.Such a surface exchange process can be carried out with any compoundcapable of coordinating to or bonding with the outer surface of thesemiconductor nanocrystal, including, for example, phosphines, thiols,amines and phosphates. The semiconductor nanocrystal can be exposed toshort chain polymers which exhibit an affinity for the surface and whichterminate in a moiety having an affinity for a suspension or dispersionmedium. Such affinity improves the stability of the suspension anddiscourages flocculation of the semiconductor nanocrystal. In otherembodiments, semiconductor nanocrystals can alternatively be preparedwith use of non-coordinating solvent(s).

For example, a coordinating ligand can have the formula:(Y—)_(k-n)—(X)-(-L)_(n)wherein k is 2, 3 or 5, and n is 1, 2, 3, 4 or 5 such that k−n is notless than zero; X is O, S, S═O, SO₂, Se, Se═O, N, N═O, P, P═O, As, orAs═O; each of Y and L, independently, is aryl, heteroaryl, or a straightor branched C2-12 hydrocarbon chain optionally containing at least onedouble bond, at least one triple bond, or at least one double bond andone triple bond. The hydrocarbon chain can be optionally substitutedwith one or more C1-4 alkyl, C2-4 alkenyl, C2-4 alkynyl, C1-4 alkoxy,hydroxyl, halo, amino, nitro, cyano, C3-5 cycloalkyl, 3-5 memberedheterocycloalkyl, aryl, heteroaryl, C1-4 alkylcarbonyloxy, C1-4alkyloxycarbonyl, C1-4 alkylcarbonyl, or formyl. The hydrocarbon chaincan also be optionally interrupted by —O—, —S—, —N(Ra)—, —N(Ra)—C(O)—O—,—O—C(O)—N(Ra)—, —N(Ra)—C(O)—N(Rb)—, —O—C(O)—O—, —P(Ra)—, or —P(O)(Ra)—.Each of Ra and Rb, independently, is hydrogen, alkyl, alkenyl, alkynyl,alkoxy, hydroxylalkyl, hydroxyl, or haloalkyl. An aryl group is asubstituted or unsubstituted cyclic aromatic group. Examples includephenyl, benzyl, naphthyl, tolyl, anthracyl, nitrophenyl, or halophenyl.A heteroaryl group is an aryl group with one or more heteroatoms in thering, for instance furyl, pyiridyl, pyrrolyl, phenanthryl.

A suitable coordinating ligand can be purchased commercially or preparedby ordinary synthetic organic techniques, for example, as described inJ. March, Advanced Organic Chemistry, which is incorporated herein byreference in its entirety.

See also U.S. patent application Ser. No. 10/641,292 entitled“Stabilized Semiconductor Nanocrystals”, filed 15 Aug. 2003, which ishereby incorporated herein by reference in its entirety.

When an electron and hole localize on a quantum confined semiconductornanoparticle (including, but not limited to, a semiconductornanocrystal), emission can occur at an emission wavelength. The emissionhas a frequency that corresponds to the band gap of the quantum confinedsemiconductor material. The band gap is a function of the size of thenanoparticle. Quantum confined semiconductor nanoparticle s having smalldiameters can have properties intermediate between molecular and bulkforms of matter. For example, quantum confined semiconductornanoparticles having small diameters can exhibit quantum confinement ofboth the electron and hole in all three dimensions, which leads to anincrease in the effective band gap of the material with decreasingcrystallite size. Consequently, for example, both the optical absorptionand emission of semiconductor nanocrystals shift to the blue, or tohigher energies, as the size of the crystallites decreases.

For an example of blue light-emitting semiconductor nanocrystalmaterials, see U.S. patent application Ser. No. 11/071,244, filed 4 Mar.2005, which is hereby incorporated by reference herein in its entirety.

The emission from a quantum confined semiconductor nanoparticle can be anarrow Gaussian emission band that can be tuned through the completewavelength range of the ultraviolet, visible, or infra-red regions ofthe spectrum by varying the size of the quantum confined semiconductornanoparticle, the composition of the quantum confined semiconductornanoparticle, or both. For example, CdSe can be tuned in the visibleregion and InAs can be tuned in the infra-red region. The narrow sizedistribution of a population of quantum confined semiconductornanoparticles can result in emission of light in a narrow spectralrange. The population can be monodisperse preferably exhibits less thana 15% rms (root-mean-square) deviation in diameter of the quantumconfined semiconductor nanoparticle s, more preferably less than 10%,most preferably less than 5%. Spectral emissions in a narrow range of nogreater than about 75 nm, preferably 60 nm, more preferably 40 nm, andmost preferably 30 nm full width at half max (FWHM) for quantum confinedsemiconductor nanoparticle s that emit in the visible can be observed.IR-emitting quantum confined semiconductor nanoparticle s can have aFWHM of no greater than 150 nm, or no greater than 100 nm. Expressed interms of the energy of the emission, the emission can have a FWHM of nogreater than 0.05 eV, or no greater than 0.03 eV. The breadth of theemission decreases as the dispersity of quantum confined semiconductornanoparticle diameters decreases.

The narrow FWHM of semiconductor nanocrystals can result in saturatedcolor emission. The broadly tunable, saturated color emission over theentire visible spectrum of a single material system is unmatched by anyclass of organic chromophores (see, for example, Dabbousi et al., J.Phys. Chem. 101, 9463 (1997), which is incorporated by reference in itsentirety). A monodisperse population of semiconductor nanocrystals willemit light spanning a narrow range of wavelengths. A pattern includingmore than one size of semiconductor nanocrystal can emit light in morethan one narrow range of wavelengths. The color of emitted lightperceived by a viewer can be controlled by selecting appropriatecombinations of semiconductor nanocrystal sizes and materials. Thedegeneracy of the band edge energy levels of semiconductor nanocrystalsfacilitates capture and radiative recombination of all possibleexcitons.

Transmission electron microscopy (TEM) can provide information about thesize, shape, and distribution of the semiconductor nanocrystalpopulation. Powder X-ray diffraction (XRD) patterns can provide the mostcomplete information regarding the type and quality of the crystalstructure of the semiconductor nanocrystals. Estimates of size are alsopossible since particle diameter is inversely related, via the X-raycoherence length, to the peak width. For example, the diameter of thesemiconductor nanocrystal can be measured directly by transmissionelectron microscopy or estimated from X-ray diffraction data using, forexample, the Scherrer equation. It also can be estimated from the UV/Visabsorption spectrum.

Quantum confined semiconductor nanoparticles are preferably handled in acontrolled (oxygen-free and moisture-free) environment, preventing thequenching of luminescent efficiency during the fabrication process.

As used herein, “top”, “bottom”, “over”, and “under” are relativepositional terms, based upon a location from a reference point. Moreparticularly, “top” means farthest away from a reference point, while“bottom” means closest to the reference point. Where, e.g., a layer isdescribed as disposed or deposited “over” a component or substrate, thelayer is disposed farther away from the component or substrate. Theremay be other layers between the layer and component or substrate. Asused herein, “cover” is also a relative position term, based upon alocation from a reference point. For example, where a first material isdescribed as covering a second material, the first material is disposedover, but not necessarily in contact with the second material.

As used herein, the singular forms “a”, “an” and “the” include pluralunless the context clearly dictates otherwise. Thus, for example,reference to an emissive material includes reference to one or more ofsuch materials.

Applicants specifically incorporate the entire contents of all citedreferences in this disclosure. Further, when an amount, concentration,or other value or parameter is given as either a range, preferred range,or a list of upper preferable values and lower preferable values, thisis to be understood as specifically disclosing all ranges formed fromany pair of any upper range limit or preferred value and any lower rangelimit or preferred value, regardless of whether ranges are separatelydisclosed. Where a range of numerical values is recited herein, unlessotherwise stated, the range is intended to include the endpointsthereof, and all integers and fractions within the range. It is notintended that the scope of the invention be limited to the specificvalues recited when defining a range.

Other embodiments of the present invention will be apparent to thoseskilled in the art from consideration of the present specification andpractice of the present invention disclosed herein. It is intended thatthe present specification and examples be considered as exemplary onlywith a true scope and spirit of the invention being indicated by thefollowing claims and equivalents thereof.

What is claimed is:
 1. An optical component including: a waveguide thatreceives light along an edge of the waveguide; and a layer on a majorsurface of the waveguide that receives light from the waveguide, thelayer comprising quantum confined semiconductor nanoparticles and a hostmaterial, wherein the layer includes from about 0.001 to about 15 weightpercent quantum confined semiconductor nanoparticles based on the weightof the host material, wherein the quantum confined semiconductornanoparticles are selected to emit two or more different predeterminedwavelengths for a desired light output when excited by optical energyfrom one or more light sources, and wherein the layer further comprisesnon-luminescent scatterers, wherein the scatterers increase absorptionpathlength of excitation light used to excite the quantum confinedsemiconductor nanoparticles in the host material and aid in out-couplingof light down-converted by the nanoparticles, and wherein the scatterersare included in the layer in an amount in the range from about 0.001 toabout 15 weight percent of the weight of the host material.
 2. Anoptical component including a waveguide including an emissive layerdisposed over a surface of the waveguide, the emissive layer comprisinga composition including quantum confined semiconductor nanoparticles anda host material, wherein the emissive layer includes from about 0.001 toabout 15 weight percent quantum confined semiconductor nanoparticlesbased on the weight of the host material, and a separate layer includingscatterers disposed under the emissive layer and a filter on a topsurface of the layers opposite the waveguide.
 3. An optical component inaccordance with claim 2 wherein another separate layer includingscatterers is disposed over the emissive layer.
 4. An optical componentin accordance with claim 2 wherein the quantum confined semiconductornanoparticles are selected to emit two or more different predeterminedwavelengths for a desired light output when excited by optical energyfrom one or more light sources.
 5. An optical component in accordancewith claim 2 wherein the quantum confined semiconductor nanoparticlesare microencapsulated in microcapsules which are distributed throughoutthe host material.
 6. An optical component in accordance with claim 2wherein the scatterers are non-luminescent scatterers.
 7. An opticalcomponent in accordance with claim 2 wherein the composition furtherincludes non-luminescent scatterers, wherein the non-luminescentscatterers increase absorption pathlength of excitation light used toexcite the quantum confined semiconductor nanoparticles in the emissivelayer and aid in out-coupling of light down-converted by thenanoparticles.
 8. An optical component in accordance with claim 7wherein the non-luminescent scatterers are included in the compositionin amount in the range from about 0.001 to about 15 weight percent basedon the weight of the host material.
 9. An optical component inaccordance with claim 7 wherein the quantum confined semiconductornanoparticles include a ligand on a surface thereof wherein the ligandhas an affinity for the host material.
 10. A film comprising a carriersubstrate comprising a flexible component including a predeterminedarrangement comprising a composition including quantum confinedsemiconductor nanoparticles disposed over a predetermined portion of asurface thereof, wherein the quantum confined semiconductornanoparticles absorb at least a portion of impinging light and reemit atleast a portion of the absorbed light energy as one or more photons of apredetermined wavelength(s), and wherein the composition furtherincludes a host material, the quantum confined semiconductornanoparticles are microencapsulated in microcapsules distributedthroughout the host material, and the nanoparticles are included in thecomposition in an amount in the range from about 0.001 to about 15weight percent based on the weight of the host material, and at leastone of a separate layer including scatterers disposed over thepredetermined arrangement and a separate layer including scatterersdisposed under the predetermined arrangement.
 11. A film in accordancewith claim 10 wherein the carrier substrate comprises a substantiallyoptically transparent material.
 12. A film in accordance with claim 10wherein the separate layer comprising scatterers is disposed over thepredetermined arrangement.
 13. A film in accordance with claim 10wherein the separate layer comprising scatterers is disposed under thepredetermined arrangement.
 14. A film in accordance with claim 10wherein the optical component includes two separate layers includingscatterers, the first being disposed over the predetermined arrangementand the second being disposed under the predetermined arrangement.
 15. Afilm in accordance with claim 10 wherein the quantum confinedsemiconductor nanoparticles are selected to emit two or more differentpredetermined wavelengths for a desired light output when excited byoptical energy from one or more light sources.
 16. A film in accordancewith claim 10 wherein the scatterers are non-luminescent scatterers. 17.A film in accordance with claim 10 wherein the composition furthercomprises non-luminescent scatterers, wherein the non-luminescentscatterers increase absorption pathlength of excitation light used toexcite the quantum confined semiconductor nanoparticles in the film andaid in out-coupling of light down-converted by the nanoparticles.
 18. Afilm in accordance with claim 17 wherein the non-luminescent scatterersare included in the composition in amount in the range from about 0.001to about 15 weight percent based on the weight of the host material. 19.An optical component including: a waveguide; a structural membercomprising a prism that receives light from a light source; and a layercomprising quantum confined semiconductor nanoparticles and a hostmaterial, wherein the structural member comprising a prism and the layerare disposed on a major surface of the waveguide, the structural memberis configured to position the light source at such an angle that thelight is coupled into the major surface of the waveguide, and whereinthe layer receives light from the waveguide, wherein the layer includesfrom about 0.001 to about 15 weight percent quantum confinedsemiconductor nanoparticles based on the weight of the host material,wherein the quantum confined semiconductor nanoparticles are selected toemit two or more different predetermined wavelengths for a desired lightoutput when excited by optical energy from one or more light sources,and wherein the layer further comprises non-luminescent scatterers,wherein the scatterers increase absorption pathlength of excitationlight used to excite the quantum confined semiconductor nanoparticles inthe host material and aid in out-coupling of light down-converted by thenanoparticles, and wherein the scatterers are included in the layer inan amount in the range from about 0.001 to about 15 weight percent ofthe weight of the host material.
 20. An optical component including awaveguide that receives light along an edge of the waveguide; and anemissive layer on a major surface of the waveguide that receives lightfrom the waveguide, the emissive layer comprising a compositionincluding quantum confined semiconductor nanoparticles and a hostmaterial, wherein the emissive layer includes from about 0.001 to about15 weight percent quantum confined semiconductor nanoparticles based onthe weight of the host material, and at least one of a separate layerincluding scatterers disposed over the emissive layer and a separatelayer including scatterers disposed under the emissive layer and afilter on a top surface of the layers opposite the waveguide.